{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP11N65M5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP11N65M5","canonicalUrl":"https://icboms.com/stmicroelectronics/STP11N65M5","factsUrl":"https://icboms.com/api/mcp/products/STP11N65M5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP11N65M5, N-Channel MOSFET, MDmesh™ V, 650 V Vdss, 9 A Id, 480 mOhm Rds(on) at 4.5 A, 10 V drive, 17 nC Qg, TO-220-3 through-hole package.","salesMarkdown":"That combination of 480 mOhm and 17 nC is typical of a 650 V super-junction MOSFET optimised for efficiency in the 100–200 W range, not for the lowest Rds(on) at the expense of switching speed. The maximum power dissipation of 85 W at case temperature Tc is a junction-limited figure — real-world dissipation depends on the heatsink's thermal resistance and ambient airflow.","metaTitle":"STP11N65M5 N-Channel MOSFET, 650 V, 9 A, TO-220-3","metaDescription":"STP11N65M5 N-channel MOSFET from STMicroelectronics MDmesh V series. 650 V drain-source, 480 mOhm Rds(on) at 4.5 A, 17 nC gate charge. TO-220-3 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ V","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP11","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"480mOhm @ 4.5A, 10V","Power Dissipation (Max)":"85W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"17 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"644 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"9A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.0900","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/fae2cb6517c6900902bda5a45882812e.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP11N65M5/alternatives.json"},"ai":{"faq":[{"question":"What is the typical gate charge of the STP11N65M5?","answer":"This moderate charge value keeps gate-drive losses low in medium-frequency switching applications up to around 100 kHz."},{"question":"Can the STP11N65M5 be used for high-frequency switching?","answer":"The 17 nC gate charge and 644 pF input capacitance at 100 V drain-source bias suit it for switching frequencies up to about 100 kHz in hard-switched topologies. For higher frequencies, a MOSFET with lower gate charge and capacitance would be more appropriate."},{"question":"What is the closest pin-compatible alternative to the STP11N65M5?","answer":"Within the same MDmesh V family, STMicroelectronics offers several 650 V N-channel MOSFETs in TO-220 packages with varying Rds(on) and current ratings. A direct pin-compatible alternative would share the same TO-220-3 footprint and gate-drive voltage requirements. Check the STP series for parts with similar voltage and package but different on-resistance or current levels."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP11N65M5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP11N65M5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}