{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP11N65M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP11N65M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STP11N65M2","factsUrl":"https://icboms.com/api/mcp/products/STP11N65M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP11N65M2, MDmesh™ II Plus N-channel MOSFET, 650 V Vdss, 7 A Id, 670 mOhm Rds(on) at 10 V, 12.5 nC Qg, TO-220-3 through-hole, -55°C to 150°C.","salesMarkdown":"## 650 V, 7 A N-channel — MDmesh II Plus The STP11N65M2: It comes in a TO-220-3 through-hole package, suited for offline switched-mode power supplies, lighting ballasts, and industrial power converters where the 650 V breakdown margin handles rectified mains with derating. At 7 A the conduction loss hits about 33 W at 25°C junction — the 85 W package power dissipation limit provides headroom, but the TO-220's thermal resistance to case (RthJC) must be managed with a heatsink. The 670 mOhm figure is the worst-case ceiling; typical Rds(on) is lower, but the design should close thermal analysis on the max value. ## 12.5 nC gate charge — switching efficiency Total gate charge at 10 V is 12.5 nC, and input capacitance is 410 pF at 100 V Vds. The low Qg keeps gate-drive energy low.","metaTitle":"STP11N65M2 N-Channel MOSFET, 650 V, 7 A, TO-220","metaDescription":"STP11N65M2 N-channel MOSFET, 650 V Vdss, 7 A Id, 670 mOhm Rds(on) at 10 V. MDmesh II Plus series, TO-220-3, active production.","metaKeywords":null},"attributes":{"series":"MDmesh™ II Plus","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II Plus","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP11","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"670mOhm @ 3.5A, 10V","Power Dissipation (Max)":"85W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"12.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"410 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.8200","priceTiers":[{"qty":1,"price":"$1.82000","currency":"USD"},{"qty":10,"price":"$1.50900","currency":"USD"},{"qty":100,"price":"$1.20120","currency":"USD"},{"qty":500,"price":"$1.01640","currency":"USD"},{"qty":1000,"price":"$0.86240","currency":"USD"},{"qty":2000,"price":"$0.81928","currency":"USD"},{"qty":5000,"price":"$0.78848","currency":"USD"},{"qty":10000,"price":"$0.76238","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/3e6ad537f6f7eca48518a133cf3e3448.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP11N65M2/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STP11N65M2?","answer":"This is the ceiling value for worst-case thermal analysis."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP11N65M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP11N65M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}