{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP11N60DM2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP11N60DM2","canonicalUrl":"https://icboms.com/stmicroelectronics/STP11N60DM2","factsUrl":"https://icboms.com/api/mcp/products/STP11N60DM2","rawCanonicalId":null},"summary":{"shortDescription":"ST MDmesh™ DM2 STP11N60DM2, N-Channel MOSFET, 600V Vdss, 10A Id, 420mOhm Rds(on) @ 10V, 16.5nC Qg, TO-220-3, -55°C to 150°C.","salesMarkdown":"## 600 V, 10 A N-channel — the offline power workhorse At 10 A the Rds(on) climbs with junction temperature — the 110 W power dissipation rating at the case is the ceiling, not a continuous operating point. ## Gate charge and switching — what the driver sees Total gate charge is 16.5 nC at 10 V, with an input capacitance of 614 pF at 100 V drain bias. The 5 V gate threshold at 250 µA is a typical figure for standard-threshold MDmesh devices. For full enhancement the drive voltage should be 10 V as specified for the Rds(on) measurement — 5 V barely turns it on. ## Temperature range and the rework bench The TO-220 is a through-hole part — you can replace it with a soldering iron and a desoldering wick, no hot-air station needed.","metaTitle":"STP11N60DM2 MOSFET N-CH 600V 10A TO-220, 420mOhm","metaDescription":"STP11N60DM2 N-channel 600V 10A MOSFET in TO-220. 420mOhm Rds(on) at 10V, 16.5nC gate charge.","metaKeywords":null},"attributes":{"series":"MDmesh™ DM2","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ DM2","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP11","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"420mOhm @ 5A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"16.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"614 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"10A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.7300","priceTiers":[{"qty":1,"price":"$1.73000","currency":"USD"},{"qty":10,"price":"$1.43600","currency":"USD"},{"qty":100,"price":"$1.14330","currency":"USD"},{"qty":500,"price":"$0.96740","currency":"USD"},{"qty":1000,"price":"$0.82083","currency":"USD"},{"qty":2000,"price":"$0.77979","currency":"USD"},{"qty":5000,"price":"$0.75047","currency":"USD"},{"qty":10000,"price":"$0.72563","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/d9aae4626add2a60ca93f847cefd7fec.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP11N60DM2/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of the STP11N60DM2?","answer":"That is the spec at 25°C junction temperature; expect it to rise by roughly 50% at 125°C junction."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP11N60DM2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP11N60DM2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}