{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP110N8F6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP110N8F6","canonicalUrl":"https://icboms.com/stmicroelectronics/STP110N8F6","factsUrl":"https://icboms.com/api/mcp/products/STP110N8F6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STripFET™ F6 N-channel MOSFET, STP110N8F6, 80 V drain-source, 110 A continuous drain, 6.5 mΩ Rds(on) at 55 A/10 V, TO-220-3 through-hole package, -55 to 175 °C junction temperature.","salesMarkdown":"## 110 A, 80 V N-channel — the power-switching workhorse The TO-220-3 through-hole package suits traditional heatsink mounting in industrial power supplies and motor drives where board-level thermal management is straightforward. At 55 A the conduction loss works out to roughly 20 W, which the 200 W maximum power dissipation can handle with adequate heatsinking. Gate charge is 150 nC at 10 V, a moderate figure that a standard gate driver IC can switch in the 50–100 kHz range without excessive drive loss. Input capacitance measures 9130 pF at 40 V drain-source, which influences the switching speed and the gate-drive current requirement; expect to budget a gate resistor for slew-rate control in hard-switching topologies. Gate-source voltage is rated ±20 V, which gives margin against overshoot during fast switching transitions.","metaTitle":"STP110N8F6 N-Channel MOSFET, 110 A, 80 V, TO-220","metaDescription":"STP110N8F6 N-channel MOSFET from STripFET F6 series: 110 A continuous drain, 80 V Vdss, 6.5 mΩ Rds(on) at 55 A. Active production, TO-220 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™ F6","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 250µA","Base Product Number":"STP110","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"6.5mOhm @ 55A, 10V","Power Dissipation (Max)":"200W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"150 nC @ 10 V","Drain to Source Voltage (Vdss)":"80 V","Input Capacitance (Ciss) (Max) @ Vds":"9130 pF @ 40 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"110A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.0900","priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP110N8F6/alternatives.json"},"ai":{"faq":[{"question":"What are the specifications of STP110N8F6?","answer":"The junction temperature range is -55 °C to 175 °C."},{"question":"What package is STP110N8F6?","answer":"It comes in a TO-220-3 through-hole package, also referred to as TO-220 in the supplier device package listing."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP110N8F6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP110N8F6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}