{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP110N7F6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP110N7F6","canonicalUrl":"https://icboms.com/stmicroelectronics/STP110N7F6","factsUrl":"https://icboms.com/api/mcp/products/STP110N7F6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STripFET™ F6 STP110N7F6 N-channel MOSFET, 68 V Vdss, 110 A Id, 6.5 mOhm Rds(on) at 55 A/10 V, TO-220-3 through-hole, -55 to 175 °C junction.","salesMarkdown":"## 68 V, 110 A N-channel MOSFET from the STripFET F6 family The 68 V Vdss gives you about 15 % headroom above a typical 48 V nominal rail (like telecom or battery-backed systems), enough to handle load-dump transients without avalanche stress. The 110 A continuous current rating at 25 °C case is a package-limited figure — in practice, derate based on your actual case temperature and the 176 W power dissipation ceiling. Gate charge of 100 nC at 10 V means the driver needs to source about 1 A peak to hit a 100 ns switching edge, so pair it with a gate driver rated for at least 2 A. STMicroelectronics lists the STP110N7F6 as Obsolete. No last-time-buy window remains; procurement relies on surplus or broker channel inventory.","metaTitle":"STP110N7F6 STripFET F6 N-Channel MOSFET, 68 V, 110 A, TO-220","metaDescription":"STP110N7F6 N-channel MOSFET from STMicroelectronics STripFET F6 series. 68 V drain-source, 110 A continuous drain, 6.5 mOhm Rds(on). TO-220 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™ F6","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP110","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"6.5mOhm @ 55A, 10V","Power Dissipation (Max)":"176W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"100 nC @ 10 V","Drain to Source Voltage (Vdss)":"68 V","Input Capacitance (Ciss) (Max) @ Vds":"5850 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"110A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.6500","priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP110N7F6/alternatives.json"},"ai":{"faq":[{"question":"What package and mounting type does the STP110N7F6 use?","answer":"It is a through-hole device in a TO-220-3 package (supplier device package TO-220)."},{"question":"Are there any known cross references or equivalents for the STP110N7F6?","answer":"For a replacement, look for a current-production N-channel MOSFET with a 68 V Vdss, 110 A Id, and 6.5 mOhm Rds(on) in TO-220 — parametric equivalents from other manufacturers may exist, but pin compatibility should be verified against the TO-220 footprint."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP110N7F6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP110N7F6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}