{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP10P6F6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP10P6F6","canonicalUrl":"https://icboms.com/stmicroelectronics/STP10P6F6","factsUrl":"https://icboms.com/api/mcp/products/STP10P6F6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics DeepGATE™, STripFET™ VI series, STP10P6F6, P-Channel MOSFET, 60 Vdss, 10 A Id, 160 mOhm Rds(on) at 10 V, 6.4 nC Qg, TO-220-3 through hole, 175 °C Tj.","salesMarkdown":"## 60 V, 10 A P-channel — TO-220 power switch The STP10P6F6 is a P-Channel MOSFET from STMicroelectronics, built on the DeepGATE™ and STripFET™ VI process generation. The 6.4 nC typical gate charge at 10 V and 340 pF input capacitance at 48 V drain bias keep the gate drive burden low — a standard 12 V gate-driver IC or a simple BJT push-pull stage can switch it at moderate frequencies without excessive crossover loss. STMicroelectronics lists the STP10P6F6 as Obsolete. The TO-220-3 package (Supplier Device Package TO-220) is a standard through-hole footprint. The gate threshold voltage is specified at 4 V maximum with 250 µA drain current, and the recommended drive voltage for the rated on-resistance is 10 V. Maximum power dissipation is 30 W at case temperature, and the junction is rated to 175 °C. In a TO-220 package bolted to a heatsink, the thermal path through the tab is the primary concern — the junction-to-case thermal resistance determines how much continuous current the part can carry before hitting the temperature ceiling.","metaTitle":"STP10P6F6 P-Channel MOSFET, 60 V, 10 A, 160 mOhm, TO-220","metaDescription":"STP10P6F6 P-Channel MOSFET from STMicroelectronics DeepGATE/STripFET VI series. 60 Vdss, 10 A continuous drain, 160 mOhm Rds(on) at 10 V.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"DeepGATE™, STripFET™ VI","Package":"Tube","FET Type":"P-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP10","Operating Temperature":"175°C(TJ)","Rds On (Max) @ Id, Vgs":"160mOhm @ 5A, 10V","Power Dissipation (Max)":"30W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"6.4 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"340 pF @ 48 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"10A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.2600","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/059a2b9ad1050e0e60a6aadacde69171.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP10P6F6/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP10P6F6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP10P6F6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}