{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP10NM65N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP10NM65N","canonicalUrl":"https://icboms.com/stmicroelectronics/STP10NM65N","factsUrl":"https://icboms.com/api/mcp/products/STP10NM65N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II series, STP10NM65N, N-Channel MOSFET, 650 V drain-source, 9 A continuous drain, 480 mOhm Rds(on) at 10 V gate drive, TO-220-3 through-hole package, -55 to 150 °C junction temperature.","salesMarkdown":"The 480 mOhm Rds(on) and 25 nC gate charge match the original design parameters. The MDmesh II die structure is the same vertical mesh technology; no layout or heatsink change is needed. ## TO-220 package — thermal and assembly fit Through-hole TO-220-3 package with the standard 2.54 mm pitch lead form. The metal tab is the drain terminal and must be electrically isolated or connected to the drain node in the layout. Maximum power dissipation is 90 W at case temperature, but the real thermal limit depends on the heatsink-to-ambient thermal resistance and the ambient air flow. The junction temperature range is -55 to 150 °C, covering industrial and some automotive under-hood environments.","metaTitle":"STP10NM65N N-Channel 650 V 9 A MOSFET, MDmesh II, TO-220","metaDescription":"STMicroelectronics STP10NM65N MDmesh II N-channel MOSFET, 650 Vdss, 9 A continuous, 480 mOhm Rds(on), TO-220.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP10","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"480mOhm @ 4.5A, 10V","Power Dissipation (Max)":"90W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"25 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"850 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"9A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP10NM65N/alternatives.json"},"ai":{"faq":[{"question":"Is STP10NM65N obsolete and what is the replacement?","answer":"Yes, the STP10NM65N is listed as obsolete. For a pin-compatible replacement within the same 650 V / 9 A class, a designer would need to evaluate current ST MDmesh series parts (e.g. MDmesh V or MDmesh K5) that match the Rds(on) and gate charge profile, but no direct cross-reference is published."},{"question":"What is the Rds(on) of STP10NM65N?","answer":"This is the value used for conduction loss calculations at the rated operating point."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP10NM65N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP10NM65N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}