{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP10NM60ND","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP10NM60ND","canonicalUrl":"https://icboms.com/stmicroelectronics/STP10NM60ND","factsUrl":"https://icboms.com/api/mcp/products/STP10NM60ND","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics FDmesh™ II series, STP10NM60ND, N-Channel MOSFET, 600 V Vdss, 8 A continuous drain, 600 mOhm Rds(on) at 10 V, 20 nC gate charge, TO-220-3 through-hole package, -55°C to 150°C junction temperature.","salesMarkdown":"## 600 V, 8 A N-channel MOSFET in TO-220 — FDmesh™ II The FDmesh™ II technology integrates a fast-recovery body diode, making this part suited for bridge topologies in switch-mode power supplies and power-factor-correction stages where reverse-recovery losses matter. Key ratings include a maximum drain-source voltage of 600 V, continuous drain current of 8 A at 25°C case temperature, and a maximum on-resistance of 600 mOhm at 4 A drain current with 10 V gate drive. The 600 V Vdss rating provides adequate headroom for universal-input offline converters (up to 400 V DC bus) with derating for switching transients. ## Lifecycle reality — obsolete, sourced through independent channels STMicroelectronics no longer manufactures this part in volume. When evaluating a replacement, look for a 600 V, 8 A N-channel MOSFET in TO-220 with similar gate charge and Rds(on); the FDmesh™ II fast-recovery diode characteristic may need matching if the replacement is used in a bridge leg.","metaTitle":"STP10NM60ND N-Channel MOSFET, 600 V, 8 A, FDmesh™ II, TO-220","metaDescription":"STP10NM60ND N-channel 600 V, 8 A MOSFET from STMicroelectronics FDmesh™ II series. Rds(on) 600 mOhm, 20 nC gate charge. Request quote.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"FDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP10","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"600mOhm @ 4A, 10V","Power Dissipation (Max)":"70W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"20 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"577 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"8A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.7500","priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP10NM60ND/alternatives.json"},"ai":{"faq":[{"question":"What is the maximum drain current of STP10NM60ND?","answer":"The maximum continuous drain current is 8 A at 25°C case temperature."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP10NM60ND","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP10NM60ND when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}