{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP10NK80Z","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP10NK80Z","canonicalUrl":"https://icboms.com/stmicroelectronics/STP10NK80Z","factsUrl":"https://icboms.com/api/mcp/products/STP10NK80Z","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH™ N-channel MOSFET, STP10NK80Z, 800 V Vdss, 9 A continuous drain current, 900 mOhm Rds(on) at 10 V, 72 nC gate charge, TO-220-3 through-hole package, -55°C to 150°C junction temperature.","salesMarkdown":"## Gate drive and switching considerations The gate-source voltage is rated to ±30 V, providing margin against overshoot in hard-switched topologies. ## Thermal and power dissipation Maximum power dissipation is 190 W at case temperature, but the practical limit is set by the junction-to-case thermal resistance and the heatsink. The TO-220 package allows mounting to a heatsink with a thermal pad or mica insulator — the tab is the drain terminal, so electrical isolation is required in most designs. At 9 A continuous drain current, the conduction loss at 900 mOhm is 73 W — exceeding the package's dissipation capability without a substantial heatsink. In practice, the device is used at lower average currents or in pulsed operation where the thermal time constant of the heatsink absorbs the peak power.","metaTitle":"ST STP10NK80Z N-Channel MOSFET, 800 V, 9 A, TO-220","metaDescription":"STMicroelectronics STP10NK80Z N-channel MOSFET, 800 V Vdss, 9 A Id, 900 mOhm Rds(on), SuperMESH™ series, TO-220 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 100µA","Base Product Number":"STP10","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"900mOhm @ 4.5A, 10V","Power Dissipation (Max)":"190W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"72 nC @ 10 V","Drain to Source Voltage (Vdss)":"800 V","Input Capacitance (Ciss) (Max) @ Vds":"2180 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"9A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.2300","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/61d26dff2665b0180ae7cb3f8780f73c.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP10NK80Z/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STP10NK80Z?","answer":"The maximum on-resistance is 900 mOhm at 4.5 A drain current and 10 V gate drive."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP10NK80Z","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP10NK80Z when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}