{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP10N95K5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP10N95K5","canonicalUrl":"https://icboms.com/stmicroelectronics/STP10N95K5","factsUrl":"https://icboms.com/api/mcp/products/STP10N95K5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH5™ series, N-Channel MOSFET, 950 V drain-to-source voltage, 8 A continuous drain current at 25°C, 800 mOhm Rds(on) at 4 A, 10 V, 22 nC gate charge, TO-220-3 through-hole package, -55°C to 150°C junction temperature.","salesMarkdown":"## 950 V N-channel MOSFET for high-voltage power conversion The STP10N95K5 is a 950 V N-channel power MOSFET from STMicroelectronics' SuperMESH5™ series, designed for high-voltage switched-mode power supplies, flyback converters, and power-factor-correction stages. The 950 V drain-to-source voltage rating provides ample headroom for universal-input offline designs where reflected voltage spikes can exceed 800 V. ## Conduction and switching losses — sizing the thermal solution With a maximum Rds(on) of 800 mOhm at 4 A drain current and 10 V gate drive, the STP10N95K5's conduction loss at the 8 A continuous drain rating reaches roughly 5.1 W at 25°C junction. The 130 W power dissipation capability (Tc) assumes an infinite heatsink — real-world designs must derate based on the TO-220 package's thermal resistance to the ambient. ## Package and mounting — through-hole for high-reliability connections Housed in a TO-220-3 through-hole package, the STP10N95K5 suits designs where vibration resistance and manual rework are priorities over board density. The ±30 V maximum gate-source voltage gives margin for gate-drive overshoot in noisy environments. The base product number STP10 covers the family; confirm the full suffix for your BOM line.","metaTitle":"STP10N95K5 N-Channel MOSFET, 950 V, 8 A, TO-220","metaDescription":"STMicroelectronics STP10N95K5 N-channel MOSFET, 950 Vdss, 8 A continuous drain, 800 mOhm Rds(on), TO-220 package. Active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH5™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 100µA","Base Product Number":"STP10","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"800mOhm @ 4A, 10V","Power Dissipation (Max)":"130W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"22 nC @ 10 V","Drain to Source Voltage (Vdss)":"950 V","Input Capacitance (Ciss) (Max) @ Vds":"630 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"8A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.6100","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/3d87f1d4a200546a51a6a310e0abb9f3.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP10N95K5/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP10N95K5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP10N95K5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}