{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP10N80K5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP10N80K5","canonicalUrl":"https://icboms.com/stmicroelectronics/STP10N80K5","factsUrl":"https://icboms.com/api/mcp/products/STP10N80K5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ K5 series N-Channel MOSFET, 800 V Vdss, 9 A continuous drain current, 600 mOhm Rds(on) at 10 V gate drive, TO-220-3 through-hole package, -55°C to 150°C junction temperature.","salesMarkdown":"## 800 V N-channel MOSFET in TO-220 — the MDmesh K5 workhorse The STP10N80K5 is an 800 V N-channel power MOSFET from STMicroelectronics' MDmesh K5 series, housed in a TO-220-3 through-hole package. Paired with a 22 nC gate charge, the STP10N80K5 offers a balanced figure of merit for conduction and switching loss. In a 100 W flyback running at 65 kHz, the lower Qg reduces driver dissipation compared to older-generation 800 V parts with similar Rds(on). The 10 V drive requirement means a standard gate-driver IC or bootstrap supply works without level shifting. ## Package and mounting — TO-220 with through-hole leads The TO-220-3 package is a through-hole form factor with a metal tab for heatsink attachment. The tab is electrically common with the drain. The three-lead body fits a 2.54 mm pitch footprint common across TO-220 devices, simplifying layout reuse from an existing 800 V MOSFET design.","metaTitle":"STP10N80K5 N-Channel MOSFET, 800 V, 9 A, TO-220-3","metaDescription":"STP10N80K5 N-Channel MOSFET from STMicroelectronics MDmesh K5 series. 800 V Vdss, 9 A Id, 600 mOhm Rds(on), TO-220-3.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ K5","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 100µA","Base Product Number":"STP10","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"600mOhm @ 4.5A, 10V","Power Dissipation (Max)":"130W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"22 nC @ 10 V","Drain to Source Voltage (Vdss)":"800 V","Input Capacitance (Ciss) (Max) @ Vds":"635 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"9A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.7361","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/517c4868fac18b0ea0b5c72ba84fc123.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP10N80K5/alternatives.json"},"ai":{"faq":[{"question":"What is the difference between STP10N80K5 and STP10N80K3?","answer":"Both are 800 V N-channel MOSFETs in TO-220 from ST's MDmesh series. The K5 variant typically offers lower gate charge and improved switching performance compared to the earlier K3 generation, making it better suited for higher-frequency designs. Specific parametric differences should be verified against the respective datasheets for your operating point."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP10N80K5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP10N80K5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}