{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP10N65K3","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP10N65K3","canonicalUrl":"https://icboms.com/stmicroelectronics/STP10N65K3","factsUrl":"https://icboms.com/api/mcp/products/STP10N65K3","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP10N65K3, N-Channel MOSFET, 650 Vdss, 10 A Id, 1 Ohm Rds(on) at 10 V, 42 nC Qg, TO-220-3, Tube.","salesMarkdown":"## 650 V, 10 A N-channel — where it fits in the power stage The STMicroelectronics STP10N65K3 is a 650 V, 10 A N-channel power MOSFET in a through-hole TO-220-3 package. It is part of the SuperMESH3 family, designed for high-voltage switching applications such as offline power supplies, AC-DC converters, and PFC stages. The 650 V drain-source breakdown voltage gives adequate margin for universal-input (85–265 VAC) offline converters, where the rectified DC bus peaks around 375 V. The 1 Ohm Rds(on) at 10 V gate drive is specified at 3.6 A drain current; at lower gate voltages (e.g., 5 V logic-level drive) the on-resistance roughly doubles, so a 10 V gate supply is strongly recommended to achieve the rated performance.","metaTitle":"STP10N65K3 N-Channel MOSFET, 650 V, 10 A, TO-220","metaDescription":"STP10N65K3 N-channel MOSFET from STMicroelectronics, 650 Vdss, 10 A continuous drain, 1 Ohm Rds(on) at 10 V. TO-220-3 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"-","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 100µA","Base Product Number":"STP10","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"1Ohm @ 3.6A, 10V","Power Dissipation (Max)":"150W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"42 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1180 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"10A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/23d9ed1138f57cf4d578ca5d10b801f9.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP10N65K3/alternatives.json"},"ai":{"faq":[{"question":"What is a replacement for STP10N65K3?","answer":"For a pin-compatible alternative in the same voltage and current class, consider the STP10N65K3's SuperMESH3 family siblings such as the STP10N65K3 itself — but since the part is obsolete, the most practical path is to source the original part through independent channels. A design-in replacement would require reviewing ST's current 650 V N-channel MOSFET portfolio for a TO-220 device with similar Rds(on) and gate charge."},{"question":"Does STP10N65K3 come in SMD package?","answer":"No. The STP10N65K3 is a through-hole device in a TO-220-3 package. No SMD variant is listed in the specifications."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP10N65K3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP10N65K3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}