{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP10N105K5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP10N105K5","canonicalUrl":"https://icboms.com/stmicroelectronics/STP10N105K5","factsUrl":"https://icboms.com/api/mcp/products/STP10N105K5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh K5 series, STP10N105K5, N-Channel MOSFET, 1050V Vdss, 6A Id, 1.3 Ohm Rds(on) @ 3A 10V, 21.5 nC Qg, TO-220-3, -55°C to 150°C.","salesMarkdown":"## 1050 V N-channel — MDmesh K5 for high-voltage switching The 21.5 nC total gate charge at 10 V means a standard gate driver IC can switch it at 100 kHz without excessive drive current — figure about 2.15 mA per 100 kHz from the driver output. This combination of high voltage, moderate current, and low gate charge targets offline flyback and PFC stages, solar inverter boost converters, and auxiliary power supplies where the primary-side switch sees rectified 400 VDC bus plus ringing margin. ## Junction temperature range and thermal budget The 5 V gate threshold at 100 µA drain current is a maximum — the typical threshold is lower, but the design must guarantee 10 V gate drive for the rated Rds(on). Below 10 V the on-resistance rises sharply, and the part may not fully enhance at 5 V gate drive. ## Input capacitance and switching speed Input capacitance (Ciss) is 545 pF maximum at 100 V drain-source. That is low enough that the switching losses at 100 kHz are dominated by the gate charge, not the Miller plateau duration. The 30 V maximum gate-source rating gives headroom for gate-drive overshoot — but keep the ringing below that absolute maximum, not the nominal drive voltage.","metaTitle":"STP10N105K5 N-Channel MOSFET, 1050V, 6A, TO-220","metaDescription":"STP10N105K5 N-channel MOSFET from STMicroelectronics MDmesh K5 series. 1050V Vdss, 1.3 Ohm Rds(on), 6A Id. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™ K5","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ K5","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 100µA","Base Product Number":"STP10","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"1.3Ohm @ 3A, 10V","Power Dissipation (Max)":"130W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"21.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"1050 V","Input Capacitance (Ciss) (Max) @ Vds":"545 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"6A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.5500","priceTiers":[{"qty":1,"price":"$3.55000","currency":"USD"},{"qty":10,"price":"$2.98300","currency":"USD"},{"qty":100,"price":"$2.41320","currency":"USD"},{"qty":500,"price":"$2.14508","currency":"USD"},{"qty":1000,"price":"$1.83672","currency":"USD"},{"qty":2000,"price":"$1.72947","currency":"USD"},{"qty":5000,"price":"$1.65925","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/722063760cd36317e69d38d1c36c404d.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP10N105K5/alternatives.json"},"ai":{"faq":[{"question":"What is the STP10N105K5 Rds(on)?","answer":"The maximum on-resistance is 1.3 Ohm at 3 A drain current with 10 V gate drive. This is the worst-case value at 25°C junction temperature; Rds(on) increases with temperature, so the hot value at 125°C is roughly 1.6 to 1.8 times the 25°C figure. Use the 1.3 Ohm figure for worst-case conduction loss at room temperature, then derate for the actual junction temperature in your thermal model."},{"question":"Does STP10N105K5 have a TO-220 package?","answer":"Yes. The package is TO-220-3 (through-hole), with the supplier device package listed as TO-220. The metal tab is the drain terminal and must be soldered or bolted to a heatsink for thermal management at the rated power dissipation."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP10N105K5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP10N105K5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}