{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP100N10F7","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP100N10F7","canonicalUrl":"https://icboms.com/stmicroelectronics/STP100N10F7","factsUrl":"https://icboms.com/api/mcp/products/STP100N10F7","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics DeepGATE™, STripFET™ VII series N-Channel MOSFET, TO-220-3, 100 V Vdss, 80 A continuous drain, 8 mΩ Rds(on) at 10 V, -55°C to 175°C junction temperature.","salesMarkdown":"## 100 V, 80 A N-channel MOSFET for high-current switching The STMicroelectronics STP100N10F7 is an N-channel power MOSFET built on the DeepGATE™ and STripFET™ VII process technology. ## 8 mΩ Rds(on) — conduction loss at 40 A At 40 A the I²R dissipation is roughly 12.8 W at the max on-resistance, which the 150 W package power rating can handle with an adequate heatsink. The specified gate charge of 61 nC at 10 V indicates moderate switching speed; the drive voltage for minimum on-resistance is 10 V, so a 12 V gate supply is the practical choice for full enhancement.","metaTitle":"STP100N10F7 N-Channel MOSFET, 100 V, 80 A, 8 mΩ, TO-220","metaDescription":"STP100N10F7 N-channel MOSFET from STMicroelectronics DeepGATE™ STripFET™ VII series. 100 V Vdss, 80 A Id, 8 mΩ Rds(on) at 10 V.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"DeepGATE™, STripFET™ VII","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 250µA","Base Product Number":"STP100","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"8mOhm @ 40A, 10V","Power Dissipation (Max)":"150W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"61 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"4369 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.0700","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/bb09d7b77b85eb51207049fd4472e2b0.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP100N10F7/alternatives.json"},"ai":{"faq":[{"question":"What is the Vgs(th) of STP100N10F7?","answer":"The maximum gate threshold voltage (Vgs(th)) is 4.5 V at a drain current of 250 µA."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP100N10F7","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP100N10F7 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}