{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STN2NF10","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STN2NF10","canonicalUrl":"https://icboms.com/stmicroelectronics/STN2NF10","factsUrl":"https://icboms.com/api/mcp/products/STN2NF10","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STripFET™ II, STN2NF10, N-Channel MOSFET, 100V Vdss, 2.4A Id, 260mOhm Rds(on) @ 10V, 14nC Qg, SOT-223, -55°C to 150°C.","salesMarkdown":"The device requires a 10V gate drive to achieve the specified on-resistance; the maximum gate-source voltage is ±20V, so a standard 12V or 15V gate drive rail is within the safe window. Gate charge is 14nC at 10V, and input capacitance measures 280pF at 25V Vds — numbers that keep switching losses moderate for a 100V part in this current class. A gate driver with 1A peak source/sink capability can switch the STN2NF10 in tens of nanoseconds; a PWM output from a controller with weaker drive will extend the switching edges, raising crossover loss. ROHS3 compliant. No known pin-compatible second source is recorded; the STripFET™ II series is STMicroelectronics' own trench-gate process, so a cross-ship to a different vendor's SOT-223 MOSFET would require re-verification of gate threshold, Rds(on) at the operating point, and switching performance.","metaTitle":"STN2NF10 MOSFET N-Ch 100V 2.4A SOT-223, Active","metaDescription":"STN2NF10 N-channel 100V 2.4A MOSFET in SOT-223. 260mOhm Rds(on) at 10V, 14nC gate charge, -55°C to 150°C. Active STripFET™ II series.","metaKeywords":null},"attributes":{"series":"STripFET™ II","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"STripFET™ II","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-261-4, TO-261AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"260mOhm @ 1.2A, 10V","Power Dissipation (Max)":"3.3W (Tc)","Supplier Device Package":"SOT-223","Gate Charge (Qg) (Max) @ Vgs":"14 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"280 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"2.4A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.23","priceTiers":[{"qty":1,"price":"$1.23000","currency":"USD"},{"qty":10,"price":"$1.09700","currency":"USD"},{"qty":100,"price":"$0.85550","currency":"USD"},{"qty":500,"price":"$0.70672","currency":"USD"},{"qty":1000,"price":"$0.61408","currency":"USD"},{"qty":4000,"price":"$0.61408","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/08d8a80ab563775fb92f931384d0340c.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STN2NF10/alternatives.json"},"ai":{"faq":[{"question":"Can I replace 2N7000 with STN2NF10?","answer":"The 2N7000 is a 60V / 200mA logic-level N-channel MOSFET in TO-92, while the STN2NF10 is a 100V / 2.4A device in SOT-223 with a 10V gate drive requirement. They are not direct replacements — the STN2NF10 has significantly higher current and voltage ratings but a different gate threshold and package footprint."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STN2NF10","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STN2NF10 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T18:51:14.863Z","lastPublished":"2026-07-22T18:51:14.863Z","indexable":true}}