{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STL7N10F7","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STL7N10F7","canonicalUrl":"https://icboms.com/stmicroelectronics/STL7N10F7","factsUrl":"https://icboms.com/api/mcp/products/STL7N10F7","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics DeepGATE™, STripFET™ VII, STL7N10F7, N-Channel MOSFET, 100V Vdss, 7A Id, 35mOhm Rds(on) @ 10V, 14nC Qg, PowerFlat 3.3x3.3, -55 to 150°C.","salesMarkdown":"## 100 V N-channel in a compact PowerFlat — what the ratings mean The headline on-resistance is 35 mOhm maximum at 3.5 A drain current with a 10 V gate drive. Gate charge is 14 nC at 10 V, a low figure that keeps gate-drive losses modest in high-frequency switching. Input capacitance is 920 pF at 50 V Vds. The junction temperature range spans -55 to 150 °C, covering automotive under-hood, industrial motor drives, and outdoor telecom enclosures. The 150 °C maximum junction temperature gives headroom for peak-load transients in compact layouts where ambient temperature runs high. ROHS3 compliance is confirmed.","metaTitle":"STL7N10F7 N-Channel MOSFET, 100V, 35mOhm, PowerFlat","metaDescription":"STL7N10F7 N-channel 100V MOSFET from STMicroelectronics, 7A continuous drain, 35mOhm Rds(on) at 10V, 14nC gate charge. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"DeepGATE™, STripFET™ VII","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"DeepGATE™, STripFET™ VII","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerVDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"35mOhm @ 3.5A, 10V","Power Dissipation (Max)":"2.9W (Ta), 50W (Tc)","Supplier Device Package":"PowerFlat™ (3.3x3.3)","Gate Charge (Qg) (Max) @ Vgs":"14 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"920 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7A (Tj)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.72","priceTiers":[{"qty":1,"price":"$1.72000","currency":"USD"},{"qty":10,"price":"$1.54700","currency":"USD"},{"qty":100,"price":"$1.24340","currency":"USD"},{"qty":500,"price":"$1.02154","currency":"USD"},{"qty":1000,"price":"$0.96372","currency":"USD"},{"qty":3000,"price":"$0.96373","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/4af7de7d029900feaeab29b5efa413b4.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STL7N10F7/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STL7N10F7?","answer":"The maximum on-resistance is 35 mOhm at 3.5 A drain current with a 10 V gate drive."},{"question":"Does STL7N10F7 work with 5V gate drive?","answer":"The maximum gate threshold voltage is 4.5 V, so a 5 V drive will barely turn the device on. The rated 35 mOhm Rds(on) requires a 10 V gate drive. At 5 V, expect significantly higher on-resistance and reduced current capability."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STL7N10F7","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STL7N10F7 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T18:51:14.863Z","lastPublished":"2026-07-22T18:51:14.863Z","indexable":true}}