{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STL4P3LLH6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STL4P3LLH6","canonicalUrl":"https://icboms.com/stmicroelectronics/STL4P3LLH6","factsUrl":"https://icboms.com/api/mcp/products/STL4P3LLH6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics DeepGATE™, STripFET™ H6 series, STL4P3LLH6, P-Channel MOSFET, 30 V Vdss, 4 A Id, 56 mOhm Rds(on) at 2 A, 10 V, 6-PowerWDFN PowerFlat™ 2x2, Surface Mount.","salesMarkdown":"## Gate charge and drive — direct GPIO switching Maximum gate charge is 6 nC at 4.5 V Vgs, which means a 3.3 V MCU GPIO can switch the FET on and off without a dedicated gate driver IC. The drive voltage range for rated Rds(on) spans 4.5 V to 10 V, so a 5 V logic rail or a 3.3 V rail with a level shifter both work within the ±20 V Vgs max. Input capacitance Ciss is 639 pF at 25 V Vds — a figure that keeps the switching edge rate manageable for EMI-sensitive loads like a sensor rail or a small DC motor. ## PowerFlat 2x2 — board area and thermal path The 6-PowerWDFN package (PowerFlat™ 2x2) occupies a 2x2 mm footprint on the PCB.","metaTitle":"STL4P3LLH6 P-Channel MOSFET, 30V 4A, PowerFlat 2x2","metaDescription":"STMicroelectronics STL4P3LLH6 P-Channel MOSFET, 30V Vdss, 4A Id, 56 mOhm Rds(on) at 10V. PowerFlat 2x2 package. Active, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"DeepGATE™, STripFET™ H6","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"DeepGATE™, STripFET™ H6","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"P-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"6-PowerWDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.5V @ 250µA","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"56mOhm @ 2A, 10V","Power Dissipation (Max)":"2.4W (Ta)","Supplier Device Package":"PowerFlat™ (2x2)","Gate Charge (Qg) (Max) @ Vgs":"6 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"639 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"4A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.6","priceTiers":[{"qty":1,"price":"$0.63000","currency":"USD"},{"qty":10,"price":"$0.55300","currency":"USD"},{"qty":100,"price":"$0.42430","currency":"USD"},{"qty":500,"price":"$0.33538","currency":"USD"},{"qty":1000,"price":"$0.27685","currency":"USD"},{"qty":3000,"price":"$0.27685","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/445108cbade3c5e8b1d8aa4ca6740303.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STL4P3LLH6/alternatives.json"},"ai":{"faq":[{"question":"Can STL4P3LLH6 be used for high-side switching?","answer":"Yes, as a P-Channel MOSFET the STL4P3LLH6 is suited for high-side load switching. The 30 V Vdss and 4 A Id rating cover typical 12 V or 24 V rails, and the 6 nC gate charge at 4.5 V allows direct drive from a logic output with a pull-up resistor to the supply rail."},{"question":"Is STL4P3LLH6 ROHS compliant?","answer":"Yes, the STL4P3LLH6 is listed as ROHS3 Compliant."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STL4P3LLH6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STL4P3LLH6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-20T14:34:45.345Z","lastPublished":"2026-07-20T14:34:45.345Z","indexable":true}}