{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STL3N65M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STL3N65M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STL3N65M2","factsUrl":"https://icboms.com/api/mcp/products/STL3N65M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ M2 series, N-Channel MOSFET, 650 V drain-source voltage, 2.3 A continuous drain current, 1.8 Ohm Rds(on) at 1 A, 10 V drive, PowerFlat™ 3.3x3.3 surface-mount package, -55°C to 150°C junction temperature.","salesMarkdown":"## 650 V switch in a 3.3x3.3 mm footprint The STL3N65M2: It comes in the PowerFlat™ 3.3x3.3 package — a low-profile, surface-mount package suited for space-constrained offline supplies and auxiliary converters where board height is a constraint. ## On-resistance and drive requirements Maximum on-resistance is 1.8 Ohm at 1 A drain current with 10 V gate drive. The gate charge is only 5 nC at 10 V, which keeps switching losses low in hard-switched topologies up to a few hundred kHz. Input capacitance Ciss is 155 pF at 100 V drain bias — a light load for the gate driver. ## Thermal and operating envelope Maximum power dissipation is 22 W at case temperature — achievable with adequate PCB copper on the PowerFlat drain pad. The 4 V maximum gate threshold at 250 µA ensures the device is fully off below 4 V, typical for logic-level drive.","metaTitle":"STL3N65M2 N-Channel MOSFET 650V 2.3A PowerFlat, Active","metaDescription":"STMicroelectronics STL3N65M2 MDmesh M2 N-channel MOSFET, 650V Vdss, 2.3A Id, 1.8 Ohm Rds(on) in PowerFlat 3.3x3.3 package. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™ M2","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™ M2","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerVDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"1.8Ohm @ 1A, 10V","Power Dissipation (Max)":"22W (Tc)","Supplier Device Package":"PowerFlat™ (3.3x3.3)","Gate Charge (Qg) (Max) @ Vgs":"5 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"155 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"2.3A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.01","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.01000","currency":"USD"},{"qty":10,"price":"$0.82800","currency":"USD"},{"qty":100,"price":"$0.64440","currency":"USD"},{"qty":500,"price":"$0.54618","currency":"USD"},{"qty":1000,"price":"$0.44492","currency":"USD"},{"qty":3000,"price":"$0.41883","currency":"USD"},{"qty":6000,"price":"$0.39889","currency":"USD"},{"qty":9000,"price":"$0.38048","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/8a3b05c87a531f9f65ac53af702e7b60.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the typical application for STL3N65M2?","answer":"This 650 V MDmesh M2 MOSFET is suited for offline flyback converters, auxiliary power supplies, PFC stages, and LED drivers where the drain current stays below 2.3 A and the package height must be under 1 mm."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STL3N65M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STL3N65M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}