{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STL3N10F7","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STL3N10F7","canonicalUrl":"https://icboms.com/stmicroelectronics/STL3N10F7","factsUrl":"https://icboms.com/api/mcp/products/STL3N10F7","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics DeepGATE™, STripFET™ VII STL3N10F7, N-Channel MOSFET, 100V Vdss, 4A Id, 70mOhm Rds(on) at 10V Vgs, PowerFlat™ (2x2) package, -55°C to 150°C junction temperature.","salesMarkdown":"## 100 V N-channel in a 2x2 mm PowerFlat — what it fits The PowerFlat™ (2x2) package keeps the footprint small — about the size of a grain of rice — which matters when board space is tight. ## Gate charge and switching speed — the drive side Total gate charge is 7.8 nC at 10 V gate drive, with input capacitance of 408 pF at 25 V drain bias. That low Qg means a modest gate driver can switch it fast — a 1 A driver charges the gate in under 10 ns, so the switching losses stay low even at a few hundred kHz. The ±20 V maximum gate-to-source rating gives headroom for gate-drive transients on a 12 V or 15 V rail. The 2.4 W power dissipation at case temperature is the thermal budget — the PowerFlat's exposed pad needs a good copper area on the PCB to keep the junction below 150°C at full drain current.","metaTitle":"STL3N10F7 N-Channel MOSFET, 100V 4A","metaDescription":"STMicroelectronics STL3N10F7 N-channel MOSFET, 100V Vdss, 4A continuous drain, 70mOhm Rds(on) at 10V gate drive. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"DeepGATE™, STripFET™ VII","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"DeepGATE™, STripFET™ VII","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"6-PowerWDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"70mOhm @ 2A, 10V","Power Dissipation (Max)":"2.4W (Tc)","Supplier Device Package":"PowerFlat™ (2x2)","Gate Charge (Qg) (Max) @ Vgs":"7.8 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"408 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"4A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.88","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.88000","currency":"USD"},{"qty":10,"price":"$0.72300","currency":"USD"},{"qty":100,"price":"$0.56270","currency":"USD"},{"qty":500,"price":"$0.47696","currency":"USD"},{"qty":1000,"price":"$0.38853","currency":"USD"},{"qty":3000,"price":"$0.34756","currency":"USD"},{"qty":6000,"price":"$0.33101","currency":"USD"},{"qty":9000,"price":"$0.31573","currency":"USD"},{"qty":30000,"price":"$0.31513","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/523c71699eb65fc30e7112c4945b9937.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of STL3N10F7?","answer":"The maximum on-resistance is 70 mOhm at 2 A drain current with 10 V gate drive. That is the figure to use for worst-case conduction loss calculations at the rated 4 A continuous drain current."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STL3N10F7","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STL3N10F7 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T16:56:34.633Z","lastPublished":"2026-07-16T16:56:34.633Z","indexable":true}}