{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STL24N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STL24N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STL24N60M2","factsUrl":"https://icboms.com/api/mcp/products/STL24N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STL24N60M2, MDmesh™ II Plus N-Channel MOSFET, 600 V Vdss, 18 A continuous drain, 210 mOhm Rds(on) at 10 V, 29 nC gate charge, PowerFlat (8x8) HV surface-mount package.","salesMarkdown":"## Gate charge and switching loss — 29 nC at 10 V Total gate charge is 29 nC at 10 V, which keeps the gate-drive energy per cycle low enough that a standard 1 A driver can switch the FET at 100 kHz without excessive dissipation in the driver IC. The input capacitance is 1060 pF at 100 V drain-source, a figure that directly sets the turn-on delay and the driver's peak current requirement. ## PowerFlat (8x8) HV — thermal and footprint considerations The 8-PowerVDFN package, branded PowerFlat (8x8) HV, exposes a large bottom-side pad for heat sinking. With a maximum power dissipation of 125 W at case temperature, the PCB copper area under the pad and the via array to the inner-layer planes determine the junction-to-ambient thermal resistance.","metaTitle":"STL24N60M2 N-Channel MOSFET, 600 V, 18 A, PowerFlat HV","metaDescription":"STL24N60M2 N-channel 600 V 18 A MOSFET in PowerFlat (8x8) HV package. 210 mOhm Rds(on) at 10 V, 29 nC gate charge. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™ II Plus","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™ II Plus","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerVDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"210mOhm @ 9A, 10V","Power Dissipation (Max)":"125W (Tc)","Supplier Device Package":"PowerFlat™ (8x8) HV","Gate Charge (Qg) (Max) @ Vgs":"29 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1060 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"18A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.24","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$3.24000","currency":"USD"},{"qty":10,"price":"$2.71900","currency":"USD"},{"qty":100,"price":"$2.19980","currency":"USD"},{"qty":500,"price":"$1.95536","currency":"USD"},{"qty":1000,"price":"$1.67428","currency":"USD"},{"qty":3000,"price":"$1.57651","currency":"USD"},{"qty":6000,"price":"$1.51250","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/a0c3edba0b3dada66b0b7ac14c9c1318.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of STL24N60M2 at 10 V gate drive?","answer":"The maximum on-resistance is 210 mOhm at 10 V gate-source voltage and 9 A drain current. This is the figure to use for conduction loss calculations at the rated operating point."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STL24N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STL24N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}