{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STL18N65M5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STL18N65M5","canonicalUrl":"https://icboms.com/stmicroelectronics/STL18N65M5","factsUrl":"https://icboms.com/api/mcp/products/STL18N65M5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ V STL18N65M5, N-Channel MOSFET, 650 V Vdss, 15 A Id, 240 mOhm Rds(on) at 10 V, 31 nC Qg, PowerFlat™ 5x6 surface-mount package.","salesMarkdown":"## Gate charge and switching loss budget Total gate charge is 31 nC at 10 V, with 1240 pF input capacitance at 100 V drain bias. At a 100 kHz hard-switching frequency, the gate drive must supply roughly 3.1 mA average current — a standard 1 A driver handles it with margin. The 57 W package-level power dissipation limit means the thermal path through the PowerFlat™ exposed pad is the real constraint in a 650 V flyback or PFC stage. ## Package and thermal interface Housed in the 8-lead PowerFlat™ 5x6 mm surface-mount package with an exposed drain pad. The copper area on the PCB under the pad sets the junction-to-ambient thermal resistance — a 25 mm² pad on a 2 oz copper board typically keeps the junction below 125°C at 15 A continuous in still air. The 150°C maximum junction temperature leaves headroom for transient overloads.","metaTitle":"STL18N65M5 N-Channel MOSFET, 650 V, 15 A, PowerFlat 5x6","metaDescription":"STL18N65M5 MDmesh V N-channel MOSFET, 650 V Vdss, 15 A Id, 240 mOhm Rds(on), 31 nC Qg. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™ V","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™ V","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerVDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"240mOhm @ 7.5A, 10V","Power Dissipation (Max)":"57W (Tc)","Supplier Device Package":"PowerFlat™ (5x6)","Gate Charge (Qg) (Max) @ Vgs":"31 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1240 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"15A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.19","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$3.43000","currency":"USD"},{"qty":10,"price":"$3.08000","currency":"USD"},{"qty":100,"price":"$2.52360","currency":"USD"},{"qty":500,"price":"$2.14830","currency":"USD"},{"qty":1000,"price":"$2.13658","currency":"USD"},{"qty":3000,"price":"$2.13657","currency":"USD"}]},"links":{"datasheetUrl":"https://www.st.com/content/ccc/resource/technical/document/datasheet/group3/b6/f4/75/01/95/07/45/f6/DM00063953/files/DM00063953.pdf/jcr:content/translations/en.DM00063953.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the maximum Rds(on) and gate charge of STL18N65M5?","answer":"Maximum Rds(on) is 240 mOhm at 7.5 A drain current with 10 V gate drive. These two numbers define the conduction and switching loss budget for the application."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STL18N65M5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STL18N65M5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T16:10:41.491Z","lastPublished":"2026-07-16T16:10:41.491Z","indexable":true}}