{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STL10N3LLH5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STL10N3LLH5","canonicalUrl":"https://icboms.com/stmicroelectronics/STL10N3LLH5","factsUrl":"https://icboms.com/api/mcp/products/STL10N3LLH5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STripFET™ V N-Channel MOSFET, STL10N3LLH5, 30V Vdss, 9A Id, 19mOhm Rds(on) max at 4.5A/10V, 6nC Qg, 8-PowerVDFN PowerFlat 3.3x3.3mm, -55°C to 150°C.","salesMarkdown":"## 30V N-channel switch for 12V rails It is built for low-voltage DC-DC conversion, load switching, and battery management in the 5V to 12V range — the 30V Vdss gives headroom on a 12V rail without forcing a larger package. ## On-resistance and gate charge — switching loss budget Maximum Rds(on) is 19 mOhm at 4.5A drain current with 10V gate drive. That figure is specified at 25°C junction; at 150°C the on-resistance roughly doubles, so the conduction loss at full load and high ambient needs to be derated accordingly. Gate charge totals 6 nC at 4.5V Vgs. For a 500 kHz switching regulator, the gate drive current required is about 3 mA — well within the capability of a standard MOSFET driver. The low Qg keeps switching losses manageable at moderate frequencies. Input capacitance Ciss is 900 pF at 25V Vds. This sets the drive impedance requirement for clean turn-on without ringing; a gate resistor in the 10-22 Ohm range is typical for this capacitance level. ## Package and thermal path The part comes in an 8-lead PowerVDFN, supplier device package PowerFlat 3.3x3.3 mm. Without that thermal connection, the 2W (Ta) power dissipation limit applies; with a good board thermal design, the 50W (Tc) limit is reachable. Mounting is surface-mount only. The package is compatible with standard reflow profiles; no special bake is required if the moisture-sensitive level (MSL) rating on the reel label is observed. ## Temperature range and operating environment The 150°C ceiling allows the part to run hot in a compact design as long as the board-level thermal resistance keeps Tj below the absolute maximum. Gate-source voltage is rated ±22V maximum, so standard 12V gate drive signals are well within the safe operating area. The threshold voltage is 2.5V maximum at 250 µA drain current, meaning the part is fully enhanced by a 5V logic-level gate signal. ## Lifecycle and sourcing ROHS3 compliant.","metaTitle":"STL10N3LLH5 MOSFET N-Ch 30V 9A PowerFlat, 19mOhm Rds(on)","metaDescription":"STripFET V N-channel MOSFET, 30V Vdss, 9A continuous drain, 19mOhm max Rds(on) at 4.5A/10V. PowerFlat 3.3x3.3mm package. Active production, ROHS3.","metaKeywords":null},"attributes":{"series":"STripFET™ V","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"STripFET™ V","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±22V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerVDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.5V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"19mOhm @ 4.5A, 10V","Power Dissipation (Max)":"2W (Ta), 50W (Tc)","Supplier Device Package":"PowerFlat™ (3.3x3.3)","Gate Charge (Qg) (Max) @ Vgs":"6 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"900 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"9A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.1","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.10000","currency":"USD"},{"qty":10,"price":"$0.98000","currency":"USD"},{"qty":100,"price":"$0.76430","currency":"USD"},{"qty":500,"price":"$0.63138","currency":"USD"},{"qty":1000,"price":"$0.54862","currency":"USD"},{"qty":3000,"price":"$0.54863","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/97f9720c7f12cb0339342be36aa35525.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of STL10N3LLH5?","answer":"Maximum Rds(on) is 19 mOhm at 4.5A drain current with 10V gate drive, measured at 25°C junction temperature."},{"question":"Can STL10N3LLH5 be used for 12V input applications?","answer":"Yes. The 30V drain-source rating provides 2.5× headroom on a 12V rail, which is adequate for most DC-DC converters and load switches. The gate threshold of 2.5V max means a 5V or 10V gate drive fully enhances the channel."},{"question":"What package does the STL10N3LLH5 use?","answer":"It is supplied in an 8-lead PowerVDFN, designated PowerFlat 3.3x3.3 mm by ST. The exposed pad on the bottom is the drain connection and must be soldered to the PCB for thermal performance."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STL10N3LLH5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STL10N3LLH5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}