{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STI24NM60N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STI24NM60N","canonicalUrl":"https://icboms.com/stmicroelectronics/STI24NM60N","factsUrl":"https://icboms.com/api/mcp/products/STI24NM60N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STI24NM60N, MDmesh™ II, N-Channel MOSFET, 600 V Vdss, 17 A Id, 190 mOhm Rds(on), 46 nC Qg, I2PAK (TO-262), -55°C to 150°C.","salesMarkdown":"## 600 V, 17 A, 190 mOhm — the SMPS workhorse in I2PAK The I2PAK (TO-262) through-hole package simplifies heatsink attachment — the exposed metal tab carries the drain and needs a thermal pad to the heatsink, with the leads soldered into the PCB. ## Gate charge and switching loss — 46 nC at 10 V Total gate charge is 46 nC at Vgs = 10 V. For a 100 kHz hard-switched converter, the gate driver must supply about 4.6 mA average current (46 nC × 100 kHz) to charge and discharge the gate capacitance each cycle. The 1400 pF input capacitance at 50 V drain bias gives a rough Miller plateau timing estimate — the driver's peak current capability should be sized to keep the switching transition under 100 ns to avoid excessive cross-conduction loss. In a downhole tool or avionics power supply, the 125 W power dissipation limit at the case (Tc) must be derated above 25°C per the datasheet curve — the I2PAK's thermal resistance to the heatsink dominates the junction temperature rise. The 4 V gate threshold at 250 µA drain current is typical for standard logic-level drive; the 10 V recommended drive voltage ensures the lowest Rds(on). ## Lifecycle and compliance — active, ROHS3, no obsolescence risk ROHS3 compliant. No official successor or cross-reference is listed, but the MDmesh™ II family includes pin-compatible variants in the I2PAK footprint — the STP24NM60N in TO-220 and the STW24NM60N in TO-247 share the same die and ratings, differing only in package and thermal performance. For dual-sourcing, confirm the package and mounting interface against the BOM.","metaTitle":"STI24NM60N N-Channel MOSFET, 600 V, 17 A, MDmesh II, I2PAK","metaDescription":"STI24NM60N N-channel 600 V 17 A MOSFET in I2PAK. Active production, ROHS3 compliant. 190 mOhm Rds(on), 46 nC gate charge.","metaKeywords":null},"attributes":{"series":"MDmesh™ II","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Long Leads, I²Pak, TO-262AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"190mOhm @ 8A, 10V","Power Dissipation (Max)":"125W (Tc)","Supplier Device Package":"I2PAK","Gate Charge (Qg) (Max) @ Vgs":"46 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1400 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"17A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.02","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$5.02000","currency":"USD"},{"qty":10,"price":"$4.21500","currency":"USD"},{"qty":100,"price":"$3.40970","currency":"USD"},{"qty":500,"price":"$3.03080","currency":"USD"},{"qty":1000,"price":"$2.59513","currency":"USD"},{"qty":2000,"price":"$2.44359","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/8188d0d39d9858d63698f380d190148a.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can STI24NM60N replace STP24NM60N?","answer":"Yes — the STI24NM60N and STP24NM60N share the same MDmesh™ II die and electrical ratings (600 V, 17 A, 190 mOhm). The difference is the package: I2PAK (TO-262) for the STI, TO-220 for the STP. The I2PAK has the drain tab exposed on the top, while the TO-220 has the tab on the back. Check the heatsink interface and lead spacing before substituting."},{"question":"What is the typical gate charge of STI24NM60N?","answer":"This value determines the gate drive current needed at the target switching frequency — for example, at 100 kHz the driver must source about 4.6 mA average."},{"question":"Is STI24NM60N RoHS compliant?","answer":"Yes — the STI24NM60N is ROHS3 compliant, meaning it meets the European RoHS directive with no exemptions for lead, mercury, cadmium, or other restricted substances."},{"question":"Can STI24NM60N be used in switch-mode power supplies?","answer":"Yes — the 600 V drain-source rating and 17 A current capability make it suitable for the primary-side switching stage in SMPS topologies like flyback, LLC resonant, and PFC boost converters up to several hundred watts. The 46 nC gate charge keeps switching losses manageable at frequencies up to 150 kHz with a properly sized gate driver."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STI24NM60N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STI24NM60N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T16:34:00.910Z","lastPublished":"2026-07-16T16:34:00.910Z","indexable":true}}