{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STI18N65M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STI18N65M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STI18N65M2","factsUrl":"https://icboms.com/api/mcp/products/STI18N65M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ M2 series, N-Channel MOSFET, 650 V Vdss, 12 A continuous drain, 330 mOhm Rds(on) at 10 V, 20 nC gate charge, I2PAK (TO-262) through-hole package, 150 °C junction temperature.","salesMarkdown":"## Gate charge and switching profile The STI18N65M2: Total gate charge is 20 nC at 10 V, with an input capacitance of 770 pF at 100 V drain-source. ## Package and thermal path Housed in a TO-262-3 long-lead I²Pak (I2PAK) through-hole package, the STI18N65M2 is intended for board-level mounting where the tab is soldered to a copper island on the PCB. The 110 W power dissipation rating assumes the case is held at 25 °C — real-world derating depends on the PCB copper area and airflow. The 150 °C maximum junction temperature sets the thermal limit for continuous operation.","metaTitle":"STI18N65M2 MOSFET N-CH 650V 12A I2PAK, 330mOhm","metaDescription":"STI18N65M2 N-channel 650 V, 12 A MOSFET in I2PAK (TO-262). 330 mOhm Rds(on) at 10 V, 20 nC gate charge. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™ M2","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™ M2","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Long Leads, I²Pak, TO-262AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"330mOhm @ 6A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"I2PAK","Gate Charge (Qg) (Max) @ Vgs":"20 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"770 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"12A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.8","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.80000","currency":"USD"},{"qty":10,"price":"$2.51200","currency":"USD"},{"qty":100,"price":"$2.01890","currency":"USD"},{"qty":500,"price":"$1.65874","currency":"USD"},{"qty":1000,"price":"$1.56485","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/c4a5ea609b54e2ae945ef0b0d5b228a1.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can STI18N65M2 be used in high-frequency applications?","answer":"The 20 nC gate charge and 770 pF input capacitance are moderate — suitable for switching frequencies up to the low hundreds of kilohertz in offline flyback, PFC, and resonant converters. For very high frequencies (above 500 kHz), a device with lower Qg and Ciss would be more efficient."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STI18N65M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STI18N65M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}