{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STH200N10WF7-2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STH200N10WF7-2","canonicalUrl":"https://icboms.com/stmicroelectronics/STH200N10WF7-2","factsUrl":"https://icboms.com/api/mcp/products/STH200N10WF7-2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STH200N10WF7-2, N-Channel MOSFET, 100 V Vdss, 180 A continuous drain, 4 mOhm Rds(on) at 90 A / 10 V, TO-263-3 (D2Pak), -55°C to 175°C.","salesMarkdown":"## What this MOSFET is built for The STH200N10WF7-2 is an N-channel power MOSFET in the STripFET F7 family, rated for 100 V drain-source and 180 A continuous drain current. The TO-263-3 (D2Pak) surface-mount package with a large exposed tab lets you pull heat into the board plane; the 340 W power dissipation rating at the case tells you the thermal path is the limiting factor, not the silicon. ## Gate drive and switching behaviour Gate charge is 93 nC at 10 V, and the recommended drive voltage is 10 V for the lowest Rds(on). The 4.5 V threshold at 250 µA means a logic-level gate driver at 5 V will turn the device on, but the Rds(on) will be higher than the 4 mOhm spec — the 10 V drive figure is the one to design to for full conduction. Input capacitance of 4430 pF at 25 V drain-source is moderate for this current class; the gate driver needs to source and sink enough peak current to hit the switching speed the application requires without excessive cross-conduction. ## Thermal and environmental reach The 340 W dissipation at the case is a theoretical ceiling — real-world derating depends on the PCB copper area and airflow. The D2Pak tab is the primary heat path; a thermal-via array under the tab is standard practice for keeping junction temperature inside the 175°C limit at full load.","metaTitle":"STH200N10WF7-2 N-Channel MOSFET, 100V, 180A, 4mOhm","metaDescription":"STH200N10WF7-2 N-Channel MOSFET from STMicroelectronics. 100V Vdss, 180A continuous drain, 4mOhm Rds(on) at 90A/10V. Active, ROHS3.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"4mOhm @ 90A, 10V","Power Dissipation (Max)":"340W (Tc)","Supplier Device Package":"H2Pak-2","Gate Charge (Qg) (Max) @ Vgs":"93 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"4430 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"180A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.97","priceTiers":[{"qty":1,"price":"$6.97000","currency":"USD"},{"qty":10,"price":"$6.29900","currency":"USD"},{"qty":100,"price":"$5.21470","currency":"USD"},{"qty":500,"price":"$4.83664","currency":"USD"},{"qty":1000,"price":"$4.83665","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/07ba0479f779fb304405085aa2fd01ff.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STH200N10WF7-2/alternatives.json"},"ai":{"faq":[{"question":"What is the closest pin-compatible alternative to STH200N10WF7-2?","answer":"The STP200N10F7 is a through-hole (TO-220) variant with the same 100 V / 180 A rating and similar Rds(on). The die is the same STripFET F7 generation, but the package differs — the STH200N10WF7-2 is surface-mount D2Pak, while the STP200N10F7 is TO-220. They are not pin-compatible; the footprint and thermal management approach are different."},{"question":"Does STH200N10WF7-2 require a heatsink?","answer":"At 180 A continuous drain, the 4 mOhm Rds(on) still produces over 130 W of conduction loss at full current. The D2Pak tab can sink significant heat into the PCB copper plane, but a dedicated heatsink or forced airflow is typically required to keep the junction below 175°C at high duty cycles."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STH200N10WF7-2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STH200N10WF7-2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}