{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STGWA50M65DF2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STGWA50M65DF2","canonicalUrl":"https://icboms.com/stmicroelectronics/STGWA50M65DF2","factsUrl":"https://icboms.com/api/mcp/products/STGWA50M65DF2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics M series, STGWA50M65DF2, Trench Field Stop IGBT, 650 V Vces, 80 A Ic, 2.1 V Vce(on) typ at 15 V / 50 A, 150 nC Qg, 375 W Pd, TO-247-3 long leads, -55 to 175 °C TJ.","salesMarkdown":"## Trench field-stop IGBT with co-pack diode — 650 V, 80 A continuous The STGWA50M65DF2 is a 650 V, 80 A trench field-stop IGBT from STMicroelectronics' M series, housed in a through-hole TO-247 long-leads package. It integrates a co-packaged freewheeling diode with a 162 ns reverse recovery time, making it a complete switch for hard-switched bridge legs. ## Conduction and switching losses — the numbers that drive the heatsink At 25°C junction, the typical Vce(on) is 2.1 V at 15 V gate drive and 50 A collector current — this is the conduction loss floor for a 50 A load. The 150 nC total gate charge means a driver sourcing 1 A can switch the gate in 150 ns, though the datasheet turn-on delay of 42 ns and turn-off delay of 130 ns set the practical dead-time floor. Switching energy at 400 V bus, 50 A, 6.8 Ω gate resistor, 15 V drive is 880 µJ turn-on and 1.57 mJ turn-off. At a 20 kHz switching frequency, the total switching loss is about 49 W — the designer must budget this against the 375 W maximum power dissipation and the thermal impedance of the TO-247 package. The co-pack diode's 162 ns trr is fast enough for most 10–30 kHz hard-switched topologies; above that, a separate fast-recovery diode may be needed to keep turn-on loss within budget. ## Package, mounting, and lifecycle The long-lead variant provides extra lead length for thicker heatsinks or insulated mounting hardware.","metaTitle":"STGWA50M65DF2 650V 80A IGBT, TO-247, Trench Field Stop","metaDescription":"STGWA50M65DF2 650V, 80A trench field-stop IGBT in TO-247 long-leads package. Vce(on) 2.1V typ at 50A, 150 nC gate charge, -55 to 175°C TJ. Active, ROHS3.","metaKeywords":null},"attributes":{"series":"M","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"M","Package":"Tube","IGBT Type":"Trench Field Stop","Input Type":"Standard","Gate Charge":"150 nC","Power - Max":"375 W","Mounting Type":"Through Hole","Package / Case":"TO-247-3","Test Condition":"400V, 50A, 6.8Ohm, 15V","lifecycle_stage":"eol_hot","Switching Energy":"880µJ (on), 1.57mJ (off)","Td (on/off) @ 25°C":"42ns/130ns","Operating Temperature":"-55°C ~ 175°C (TJ)","Supplier Device Package":"TO-247 Long Leads","Vce(on) (Max) @ Vge, Ic":"2.1V @ 15V, 50A","Reverse Recovery Time (trr)":"162 ns","Current - Collector (Ic) (Max)":"80 A","Current - Collector Pulsed (Icm)":"150 A","Voltage - Collector Emitter Breakdown (Max)":"650 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.27","priceTiers":[{"qty":1,"price":"$5.27000","currency":"USD"},{"qty":30,"price":"$4.17800","currency":"USD"},{"qty":120,"price":"$3.58125","currency":"USD"},{"qty":510,"price":"$3.18335","currency":"USD"},{"qty":1020,"price":"$2.72575","currency":"USD"},{"qty":2010,"price":"$2.56658","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/c363530fcee6f3456eefca3b180aa7f4.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STGWA50M65DF2/alternatives.json"},"ai":{"faq":[{"question":"What is the Vce(on) of STGWA50M65DF2?","answer":"The typical Vce(on) is 2.1 V at 15 V gate drive and 50 A collector current at 25°C junction temperature."},{"question":"What is the maximum current rating for STGWA50M65DF2?","answer":"The continuous collector current (Ic) is 80 A; the pulsed collector current (Icm) is 150 A."},{"question":"Does STGWA50M65DF2 have a built-in freewheeling diode?","answer":"Yes, the STGWA50M65DF2 integrates a co-packaged freewheeling diode with a reverse recovery time of 162 ns."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STGWA50M65DF2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STGWA50M65DF2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-20T14:34:45.345Z","lastPublished":"2026-07-20T14:34:45.345Z","indexable":true}}