{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STGB15H60DF","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STGB15H60DF","canonicalUrl":"https://icboms.com/stmicroelectronics/STGB15H60DF","factsUrl":"https://icboms.com/api/mcp/products/STGB15H60DF","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STGB15H60DF Trench Field Stop IGBT, 600 V Vces, 30 A Ic, 115 W, 81 nC Qg, D²Pak (TO-263AB) surface mount, -55°C to 175°C junction.","salesMarkdown":"## 600 V, 30 A Trench Field Stop IGBT for motor-drive and power-conversion stages The STGB15H60DF is a 600 V, 30 A Trench Field Stop IGBT from STMicroelectronics, housed in a surface-mount D²Pak (TO-263AB) package. It is designed for medium-frequency switching applications such as motor drives, uninterruptible power supplies, induction heating, and solar inverters where low conduction and switching losses are required. The Trench Field Stop structure delivers a low Vce(on) of 2 V at 15 V gate drive and 15 A collector current, combined with fast switching characterised by 24.5 ns turn-on and 118 ns turn-off delay times at 25°C. ## Switching losses and gate-drive budget Total switching energy is 136 µJ during turn-on and 207 µJ during turn-off, measured at 400 V, 15 A, 10 Ω gate resistor, and 15 V gate drive. These numbers let you calculate the switching loss contribution at your operating frequency: at 20 kHz, the per-pulse loss sum of 343 µJ translates to roughly 6.9 W of switching dissipation, which must be added to the conduction loss to size the heatsink. The 81 nC total gate charge sets the average gate-drive current required. Driving the gate at 20 kHz with a 15 V swing demands about 81 nC × 20 kHz = 1.6 mA average from the driver, well within the capability of most standard gate-drive ICs. The reverse recovery time of the internal diode is 103 ns, which matters for hard-switched topologies where the diode recovery contributes to turn-on loss. ## Thermal and package considerations for the D²Pak The 175°C maximum junction allows headroom above the typical 150°C limit of many IGBTs, but the thermal impedance from junction to case must be managed with adequate PCB copper area on the drain tab. The D²Pak (TO-263AB) is a surface-mount package with an exposed metal tab that carries the collector connection. For the 115 W maximum power dissipation to be usable, the PCB must provide a low-thermal-resistance path through multiple vias to an internal or backside copper plane. The 60 A pulsed collector current rating (Icm) confirms the die can handle short overloads, but the package solder joint and PCB copper must survive the associated thermal cycling.","metaTitle":"STGB15H60DF IGBT, 600V 30A Trench Field Stop, D²Pak","metaDescription":"STGB15H60DF is a 600V, 30A Trench Field Stop IGBT in D²Pak (TO-263AB). Gate charge 81 nC, switching energy 136/207 µJ. -55°C to 175°C junction range.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","IGBT Type":"Trench Field Stop","Input Type":"Standard","Gate Charge":"81 nC","Power - Max":"115 W","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","Test Condition":"400V, 15A, 10Ohm, 15V","lifecycle_stage":"eol_hot","Switching Energy":"136µJ (on), 207µJ (off)","Td (on/off) @ 25°C":"24.5ns/118ns","Operating Temperature":"-55°C ~ 175°C (TJ)","Supplier Device Package":"D²PAK (TO-263)","Vce(on) (Max) @ Vge, Ic":"2V @ 15V, 15A","Reverse Recovery Time (trr)":"103 ns","Current - Collector (Ic) (Max)":"30 A","Current - Collector Pulsed (Icm)":"60 A","Voltage - Collector Emitter Breakdown (Max)":"600 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.59","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.59000","currency":"USD"},{"qty":10,"price":"$2.32500","currency":"USD"},{"qty":100,"price":"$1.86880","currency":"USD"},{"qty":500,"price":"$1.53538","currency":"USD"},{"qty":1000,"price":"$1.44848","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/156bf820b1cd11c09e1802b77078d86b.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the gate charge of the STGB15H60DF?","answer":"The total gate charge (Qg) is 81 nC. This value determines the average gate-drive current needed at your switching frequency — for example, 20 kHz switching requires about 1.6 mA average from the gate driver."},{"question":"What is the difference between STGB15H60DF and STGB15H60D?","answer":"The suffix 'F' in STGB15H60DF indicates the Trench Field Stop generation with faster switching and lower Vce(sat) compared to the earlier STGB15H60D. The 'DF' variant typically offers improved switching energy and a wider safe operating area for hard-switched topologies."},{"question":"What package does the STGB15H60DF come in?","answer":"It is supplied in a surface-mount D²Pak (TO-263AB) package, also known as TO-263-3 with 2 leads plus tab. The exposed collector tab requires thermal management through PCB copper."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STGB15H60DF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STGB15H60DF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T16:15:45.473Z","lastPublished":"2026-07-16T16:15:45.473Z","indexable":true}}