{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STGB10NC60KDT4","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STGB10NC60KDT4","canonicalUrl":"https://icboms.com/stmicroelectronics/STGB10NC60KDT4","factsUrl":"https://icboms.com/api/mcp/products/STGB10NC60KDT4","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics PowerMESH™ IGBT, STGB10NC60KDT4, 600 V Collector-Emitter Breakdown, 20 A Continuous Collector, 65 W Max Power, D2PAK (TO-263-3) Surface Mount.","salesMarkdown":"## 600 V, 20 A IGBT with co-packaged fast diode The STGB10NC60KDT4 is a 600 V, 20 A IGBT from STMicroelectronics' PowerMESH™ series, housed in a D2PAK (TO-263-3) surface-mount package. It integrates a fast-recovery diode with a 22 ns reverse recovery time, making it suited for hard-switched topologies like motor drives, PFC stages, and induction heating where the diode's recovery characteristic directly affects turn-on loss and EMI. ## Switching losses and thermal budget at 390 V, 5 A At 390 V, 5 A, 10 Ω gate resistor, and 15 V gate drive, the part switches 55 µJ on and 85 µJ off. The 19 nC total gate charge presents a moderate capacitive load to the gate driver. ## Active production, no LTB concern It is ROHS3 compliant.","metaTitle":"STGB10NC60KDT4 IGBT 600V 20A 65W D2PAK, PowerMESH™","metaDescription":"STGB10NC60KDT4 IGBT from STMicroelectronics PowerMESH™ series, 600V Vces, 20A Ic, 65W max power, D2PAK surface mount. Active lifecycle, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"PowerMESH™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"PowerMESH™","Package":"Tape & Reel (TR); Cut Tape (CT)","Input Type":"Standard","Gate Charge":"19 nC","Power - Max":"65 W","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","Test Condition":"390V, 5A, 10Ohm, 15V","lifecycle_stage":"eol_hot","Switching Energy":"55µJ (on), 85µJ (off)","Td (on/off) @ 25°C":"17ns/72ns","Operating Temperature":"-55°C ~ 150°C (TJ)","Supplier Device Package":"D2PAK","Vce(on) (Max) @ Vge, Ic":"2.5V @ 15V, 5A","Reverse Recovery Time (trr)":"22 ns","Current - Collector (Ic) (Max)":"20 A","Current - Collector Pulsed (Icm)":"30 A","Voltage - Collector Emitter Breakdown (Max)":"600 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.55","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.55000","currency":"USD"},{"qty":10,"price":"$1.28600","currency":"USD"},{"qty":100,"price":"$1.02390","currency":"USD"},{"qty":500,"price":"$0.86642","currency":"USD"},{"qty":1000,"price":"$0.73514","currency":"USD"},{"qty":2000,"price":"$0.69838","currency":"USD"},{"qty":5000,"price":"$0.67213","currency":"USD"},{"qty":10000,"price":"$0.64988","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/921b6fcc1f9d4a1eb0b8a468e267994c.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Does STGB10NC60KDT4 have a built-in diode?","answer":"Yes. The part integrates a fast-recovery diode with a 22 ns reverse recovery time, specified in the same test condition as the IGBT."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STGB10NC60KDT4","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STGB10NC60KDT4 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T17:11:06.171Z","lastPublished":"2026-07-16T17:11:06.171Z","indexable":true}}