{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STFW60N65M5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STFW60N65M5","canonicalUrl":"https://icboms.com/stmicroelectronics/STFW60N65M5","factsUrl":"https://icboms.com/api/mcp/products/STFW60N65M5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STFW60N65M5, N-Channel MOSFET, MDmesh™ V, 650 Vdss, 46 A Id, 59 mOhm Rds(on) @ 23 A, 10 V, 139 nC Qg, TO-3P-3 Full Pack (TO-3PF), 150°C Tj.","salesMarkdown":"## 650 V, 46 A N-channel MOSFET — MDmesh V generation The device is packaged in a through-hole TO-3PF with a fully isolated tab, simplifying heatsink attachment and eliminating the need for an insulating pad in many assemblies. ## 59 mOhm on-resistance and gate charge — switching loss trade-off These numbers indicate a device that balances on-resistance with moderate switching energy — suitable for hard-switched topologies like power-factor correction (PFC) stages and primary-side switches in AC-DC converters where conduction loss dominates the thermal budget. For existing BOM lines, procurement must rely on independent distribution channels for remaining inventory or qualified surplus stock. The TO-3PF is a through-hole, fully isolated package rated for a maximum power dissipation of 79 W at case temperature. The full-pack construction means the metal back is electrically isolated, which simplifies mounting to a heatsink without an additional insulator. The maximum junction temperature is 150°C. For continuous operation near the 46 A rating, a substantial heatsink and forced airflow are typically required to keep the junction within limits.","metaTitle":"STFW60N65M5 N-Channel MOSFET, 650 V, 46 A, MDmesh V, TO-3PF","metaDescription":"STMicroelectronics STFW60N65M5 N-channel MOSFET, 650 Vdss, 46 A Id, 59 mOhm Rds(on). MDmesh V series. Request quote.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ V","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-3P-3 Full Pack","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STFW","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"59mOhm @ 23A, 10V","Power Dissipation (Max)":"79W (Tc)","Supplier Device Package":"TO-3PF","Gate Charge (Qg) (Max) @ Vgs":"139 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"6810 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"46A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$13.3600","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null},"ai":{"faq":[{"question":"Where can I buy the STFW60N65M5?","answer":"The STFW60N65M5 is obsolete and no longer in production."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STFW60N65M5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STFW60N65M5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}