{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STFW4N150","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STFW4N150","canonicalUrl":"https://icboms.com/stmicroelectronics/STFW4N150","factsUrl":"https://icboms.com/api/mcp/products/STFW4N150","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics PowerMESH™ N-Channel MOSFET, STFW4N150, 1500 Vdss, 4 A Id, 7 Ohm Rds(on) at 10 V, TO-3P-3 Full Pack (TO-3PF), Through Hole, 63 W power dissipation.","salesMarkdown":"## 1500 V N-channel in a full-pack isolated tab The STMicroelectronics STFW4N150 is a 1500 V, 4 A N-channel PowerMESH MOSFET in a TO-3PF full-pack through-hole package. The 1500 V drain-source rating places it squarely in high-voltage offline applications — flyback converters, PFC stages, two-switch forward converters, and auxiliary power supplies where the primary-side rail runs off rectified mains. ## 7 Ohm Rds(on) — conduction loss budget On-resistance is specified at 7 Ohm maximum with 10 V gate drive at 2 A drain current. That is a relatively high figure compared to low-voltage switching FETs, but at 1500 V the die is sized for voltage blocking, not low Rds(on). Conduction loss at 2 A is I²R = 28 W, which consumes nearly half the 63 W power dissipation budget at 25°C case temperature. Practical designs will run at lower duty cycles or lower average currents to stay inside the SOA. That is modest — a standard gate driver IC or a simple resistor-capacitor drive network can charge the gate in a few hundred nanoseconds. The 50 nC Qg means the gate drive power at 100 kHz switching is Pgate = Qg × Vgs × fsw = 50 nC × 10 V × 100 kHz = 50 mW, easily handled by a small driver. The 1300 pF Ciss keeps the Miller plateau short, so switching losses in a resonant or quasi-resonant topology stay manageable. The base product number is STFW4, which covers the family variants — confirm the exact suffix for your BOM line.","metaTitle":"STMicroelectronics STFW4N150 N-Channel MOSFET, 1500 V, 4 A","metaDescription":"STMicroelectronics STFW4N150 PowerMESH N-channel MOSFET rated 1500 Vdss, 4 A continuous, 7 Ohm Rds(on) at 10 V. Active production, TO-3PF full-pack.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"PowerMESH™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-3P-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STFW4","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"7Ohm @ 2A, 10V","Power Dissipation (Max)":"63W (Tc)","Supplier Device Package":"TO-3PF","Gate Charge (Qg) (Max) @ Vgs":"50 nC @ 10 V","Drain to Source Voltage (Vdss)":"1500 V","Input Capacitance (Ciss) (Max) @ Vds":"1300 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"4A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.1000","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/b19b8781a2189285f90bcfaaaea3ce3a.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Vgs threshold of STFW4N150?","answer":"The maximum gate-source threshold voltage is 5 V at 250 µA drain current. The recommended drive voltage for minimum on-resistance is 10 V."},{"question":"What is the closest pin-compatible alternative to STFW4N150?","answer":"STMicroelectronics offers the STFW4N150 in the PowerMESH family with the TO-3PF package. Pin-compatible alternatives within the same voltage class would be other TO-3PF N-channel MOSFETs from the STW series — verify the footprint and gate drive requirements against your specific design before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STFW4N150","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STFW4N150 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}