{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STFW40N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STFW40N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STFW40N60M2","factsUrl":"https://icboms.com/api/mcp/products/STFW40N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II Plus N-Channel MOSFET, STFW40N60M2, 600V Vdss, 34A Id @ 25°C, 88mOhm Rds(on) @ 10V, TO-3P-3 Full Pack, -55°C to 150°C Tj.","salesMarkdown":"## 600 V N-channel MOSFET in the MDmesh™ II Plus family The STFW40N60M2 is a 600 V N-channel power MOSFET from STMicroelectronics' MDmesh™ II Plus series, built on a strip-layout vertical DMOS process that reduces on-resistance per unit area. The TO-3P-3 Full Pack package provides full isolation from the heatsink, eliminating the need for a separate insulating pad in high-voltage power stages. With a maximum Rds(on) of 88 mOhm at Vgs=10 V, conduction loss at 17 A is under 26 W at the hot corner after temperature derating — the typical Rds(on) at 150°C junction is roughly 1.6× the 25°C value, so budget 140 mOhm worst-case for thermal design. Total gate charge Qg is 57 nC at 10 V, which translates to a gate-drive current of about 570 mA to switch at 100 kHz. The input capacitance Ciss is 2500 pF at Vds=100 V, a moderate figure that keeps the Miller plateau manageable with a standard totem-pole driver. ## Package and mounting — TO-3PF full-pack The TO-3P-3 Full Pack (TO-3PF) through-hole package has an isolated backside tab — no insulating washer is required between the device and the heatsink, simplifying assembly and reducing thermal interface resistance. The mounting hole pattern is standard for the TO-3P outline; the supplier device package code is TO-3PF. Power dissipation is rated at 63 W at case temperature Tc, a realistic ceiling for a single device in a forced-air or large-fin heatsink. The 150°C max junction is the thermal limit for power dissipation budgeting — derate the 63 W (Tc) figure linearly above 25°C case temperature per the datasheet curve. The wide Tj range also supports cold-start conditions down to -55°C, relevant for outdoor telecom and engine-bay applications.","metaTitle":"STFW40N60M2 MOSFET N-CH 600V 34A TO-3PF, MDmesh II Plus","metaDescription":"STMicroelectronics STFW40N60M2 N-channel 600V 34A MOSFET in TO-3PF full-pack. 88mOhm Rds(on) at 10V. Active production, ROHS3.","metaKeywords":null},"attributes":{"series":"MDmesh™ II Plus","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II Plus","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-3P-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STFW40","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"88mOhm @ 17A, 10V","Power Dissipation (Max)":"63W (Tc)","Supplier Device Package":"TO-3PF","Gate Charge (Qg) (Max) @ Vgs":"57 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"2500 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"34A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.1600","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$6.47000","currency":"USD"},{"qty":10,"price":"$5.84300","currency":"USD"},{"qty":100,"price":"$4.83780","currency":"USD"},{"qty":500,"price":"$4.48700","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/ce6c249eaf5bcfc810461b88da5aa00f.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the closest pin-compatible alternative to STFW40N60M2 in this component family?","answer":"No official second-source or pin-compatible cross-reference is recorded for the STFW40N60M2. The MDmesh™ II Plus series includes other 600 V N-channel devices in the same TO-3PF package with varying current and Rds(on) ratings, but none are formally listed as direct replacements. Confirm the BOM position against the target Rds(on) and Id requirements before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STFW40N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STFW40N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}