{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STFW2N105K5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STFW2N105K5","canonicalUrl":"https://icboms.com/stmicroelectronics/STFW2N105K5","factsUrl":"https://icboms.com/api/mcp/products/STFW2N105K5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH5™ STFW2N105K5 N-channel MOSFET, 1050 V Vdss, 2 A continuous drain, 8 Ohm Rds(on) at 750 mA, 10 Vgs, 10 nC gate charge, TO-3PF through-hole package, -55°C to 150°C junction temperature.","salesMarkdown":"## 1050 V N-channel MOSFET in a TO-3PF full-pack The STMicroelectronics STFW2N105K5 is an N-channel MOSFET from the SuperMESH5™ series, built for high-voltage switching applications. The full-pack isolation simplifies heatsinking — no insulating washer needed between the tab and the heatsink, which cuts assembly time and thermal resistance in the mounting stack. The SuperMESH5™ process targets low gate charge (10 nC typical at 10 V) to keep switching losses manageable in hard-switched topologies like flyback or PFC stages. The 8 Ohm maximum Rds(on) is specified at 750 mA drain current with 10 V gate drive. That 8 Ohm at 2 A means 32 W conduction loss at full current — well above the 30 W package dissipation limit, so the design must operate well below the continuous rating or use pulse duty. For a flyback primary switch at 100 kHz, the 10 nC gate charge draws only 1 mA average from the gate driver, so a simple driver IC or even a discrete totem-pole will handle it. Vgs(th) is 5 V maximum at 100 µA drain current, which is a relatively high threshold. This means the device is fully off with a 0 V gate signal even in noisy environments, but the gate drive must swing cleanly above 10 V to achieve the rated Rds(on). A 12 V or 15 V gate supply is typical. ## Sourcing and lifecycle posture It is ROHS3 compliant.","metaTitle":"STFW2N105K5 MOSFET N-CH 1050V 2A SuperMESH5™ TO-3PF","metaDescription":"STMicroelectronics STFW2N105K5 N-channel MOSFET, 1050 V Vdss, 2 A continuous drain, 8 Ohm Rds(on) at 750 mA. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"SuperMESH5™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH5™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-3P-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 100µA","Base Product Number":"STFW2","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"8Ohm @ 750mA, 10V","Power Dissipation (Max)":"30W (Tc)","Supplier Device Package":"TO-3PF","Gate Charge (Qg) (Max) @ Vgs":"10 nC @ 10 V","Drain to Source Voltage (Vdss)":"1050 V","Input Capacitance (Ciss) (Max) @ Vds":"115 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"2A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.8900","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.89000","currency":"USD"},{"qty":10,"price":"$2.59400","currency":"USD"},{"qty":100,"price":"$2.08460","currency":"USD"},{"qty":500,"price":"$1.71272","currency":"USD"},{"qty":1000,"price":"$1.61578","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/64e730083a3d8779669fdd71be71a4a4.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of the STFW2N105K5?","answer":"The maximum Rds(on) is 8 Ohm at 750 mA drain current with 10 V gate drive. This on-resistance is specified at 25°C junction; expect it to rise with temperature per the normalised curve in the datasheet."},{"question":"What is the Vgs(th) of the STFW2N105K5?","answer":"The maximum gate threshold voltage is 5 V at 100 µA drain current. The gate drive must swing above 10 V to achieve the rated Rds(on); a 12 V or 15 V gate supply is typical."},{"question":"What package does the STFW2N105K5 come in?","answer":"The full-pack construction provides electrical isolation between the tab and the heatsink, eliminating the need for an insulating washer."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STFW2N105K5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STFW2N105K5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}