{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STFV4N150","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STFV4N150","canonicalUrl":"https://icboms.com/stmicroelectronics/STFV4N150","factsUrl":"https://icboms.com/api/mcp/products/STFV4N150","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics PowerMESH series, STFV4N150, N-Channel 1500 V MOSFET, 4 A continuous drain, 7 Ohm Rds(on) at 10 V, 50 nC gate charge, TO-220-3 Full Pack isolated tab, through hole.","salesMarkdown":"ST lists the STFV4N150 as Obsolete. ## Gate charge and input capacitance — drive and switching budget These numbers size the gate-drive circuit: a 10 V drive voltage is required to achieve the rated on-resistance. The 50 nC Qg means a typical gate driver with 1 A peak source/sink can switch the device in the tens of nanoseconds range, but the isolated TO-220 package adds lead inductance that slows the edge — account for it in the gate-loop layout. The 1300 pF Ciss at 25 V Vds is moderate for a 1500 V device; it does not demand an unusually strong driver, but the Miller plateau will be visible on the gate waveform. ## Thermal and power handling in the Full Pack Maximum power dissipation is 40 W at case temperature, and the junction temperature rating is 150 °C. The TO-220 Full Pack has higher thermal resistance than a standard TO-220 because the plastic encapsulation surrounds the die — the junction-to-case thermal path is through the mould compound, not a metal tab. In practice, the 40 W ceiling is reachable only with a large heatsink and good thermal interface. For continuous operation at 4 A, the 7 Ohm Rds(on) produces 112 W conduction loss at full current — clearly the 4 A rating is a pulsed or short-duration maximum, not a steady-state figure at 1500 V. Derate aggressively for linear-mode or switching applications with high duty cycles.","metaTitle":"STFV4N150 N-Channel MOSFET, 1500 V, 4 A, TO-220 Full Pack","metaDescription":"STMicroelectronics STFV4N150 PowerMESH N-channel MOSFET, 1500 Vdss, 4 A continuous drain, 7 Ohm Rds(on) at 10 V. TO-220 Full Pack isolated tab.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"PowerMESH™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack, Isolated Tab","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STFV4","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"7Ohm @ 2A, 10V","Power Dissipation (Max)":"40W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"50 nC @ 10 V","Drain to Source Voltage (Vdss)":"1500 V","Input Capacitance (Ciss) (Max) @ Vds":"1300 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"4A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.4000","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/2dc6ccab2470f0bc0bd8bd3cbe8c56bf.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Where can I buy STFV4N150?","answer":"The STFV4N150 is obsolete from STMicroelectronics. We source it through independent distribution channels — new-old-stock and surplus inventory. Submit an RFQ for current availability and pricing; we confirm both at quote time. No stock or price figures are published here because the supply position changes with each incoming lot."},{"question":"What is a direct replacement for STFV4N150?","answer":"ST does not list an official direct replacement for the STFV4N150. Because it is obsolete, you will need to evaluate current-production high-voltage N-channel MOSFETs with a 1500 V Vdss rating in a TO-220 Full Pack or similar isolated package. The 1500 V class is a narrow niche — most modern high-voltage MOSFETs top out at 900 V or 1000 V. Expect to adjust gate drive and thermal management when substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STFV4N150","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STFV4N150 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}