{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STFU9N65M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STFU9N65M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STFU9N65M2","factsUrl":"https://icboms.com/api/mcp/products/STFU9N65M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ M2 series, N-Channel MOSFET, 650 V Vdss, 5 A continuous drain, 900 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, through-hole, -55 to 150 °C junction temperature.","salesMarkdown":"## 650 V N-channel MOSFET in a fully isolated TO-220FP The STMicroelectronics STFU9N65M2 is a 650 V N-channel power MOSFET from the MDmesh™ M2 series, built with a planar technology that balances on-resistance and switching performance. ## On-resistance and gate charge profile Input capacitance (Ciss) measures 315 pF at 100 V drain-source, a value that keeps the Miller plateau narrow and supports clean switching up to several hundred kilohertz in resonant or quasi-resonant topologies. ## Temperature range and thermal management Maximum power dissipation is 20 W at case temperature, which, combined with the TO-220FP's isolated backside, demands a heatsink for sustained operation above a few watts. The full-pack construction also simplifies board-level thermal simulation: the tab is at the same potential as the heatsink pad, so no thermal pad or mica insulator is needed, and the thermal resistance from junction to case is specified without an isolation layer in the path.","metaTitle":"STFU9N65M2 N-Channel MOSFET, 650 V, 5 A, 900 mOhm, TO-220FP","metaDescription":"STMicroelectronics STFU9N65M2 MDmesh M2 N-channel MOSFET: 650 V Vdss, 5 A Id, 900 mOhm Rds(on) at 10 V, TO-220 Full Pack, -55 to 150 °C.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M2","Package":"Tape & Reel (TR)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STFU9","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"900mOhm @ 2.5A, 10V","Power Dissipation (Max)":"20W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"10 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"315 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.7999","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds on of STFU9N65M2?","answer":"The maximum on-resistance is 900 mOhm at a drain current of 2.5 A with 10 V gate-to-source drive."},{"question":"What package does STFU9N65M2 come in?","answer":"It comes in a TO-220-3 Full Pack (TO-220FP) through-hole package, which has a fully isolated mounting tab."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STFU9N65M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STFU9N65M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}