{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STFU23N80K5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STFU23N80K5","canonicalUrl":"https://icboms.com/stmicroelectronics/STFU23N80K5","factsUrl":"https://icboms.com/api/mcp/products/STFU23N80K5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STFU23N80K5, MDmesh™ K5 series, N-channel MOSFET, 800 V Vdss, 16 A continuous drain, 280 mOhm Rds(on) at 10 V, 33 nC gate charge, TO-220-3 Full Pack (TO-220FP), -55 to 150 °C junction.","salesMarkdown":"## 800 V, 16 A switching MOSFET — the conduction-loss number that matters ## TO-220FP package and thermal derating Maximum power dissipation is 35 W at case temperature — that 35 W is the total the package can shed, so the actual continuous current you can pull drops fast once the case rises above 25 °C. ## Gate drive and switching behaviour The gate threshold voltage maximum is 5 V at 100 µA drain current, and the recommended drive voltage for minimum Rds(on) is 10 V — a 12 V gate drive rail is the sweet spot; a 5 V logic-level drive will not fully enhance this part. Maximum gate-to-source voltage is ±30 V, giving good margin against ringing on long gate traces — but you still want a gate resistor and a zener clamp if the drive layout is noisy. Input capacitance is 1000 pF at 100 V drain bias — this is modest for an 800 V part, so the switching node capacitance won't dominate your turn-on loss in a hard-switched converter. The base product number is STFU23; the full order code is STFU23N80K5, and the tape-and-reel suffix (TR) indicates the shipping medium for the through-hole TO-220FP — bulk tube is also available through the factory channel.","metaTitle":"ST STFU23N80K5 N-Channel MOSFET, 800V, 16A, TO-220FP","metaDescription":"STMicroelectronics STFU23N80K5 MDmesh K5 N-channel MOSFET: 800V Vdss, 16A Id, 280mOhm Rds(on) at 10V. Active production, TO-220FP.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ K5","Package":"Tape & Reel (TR)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 100µA","Base Product Number":"STFU23","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"280mOhm @ 8A, 10V","Power Dissipation (Max)":"35W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"33 nC @ 10 V","Drain to Source Voltage (Vdss)":"800 V","Input Capacitance (Ciss) (Max) @ Vds":"1000 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"16A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.3310","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/d41add83a4f0ec9b7aa8841c82a43914.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of STFU23N80K5?","answer":"The maximum Rds(on) is 280 mOhm at 8 A drain current with 10 V gate drive — that's the spec to use for worst-case conduction-loss calculations."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STFU23N80K5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STFU23N80K5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}