{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STFU16N65M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STFU16N65M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STFU16N65M2","factsUrl":"https://icboms.com/api/mcp/products/STFU16N65M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ M2 series, STFU16N65M2, N-Channel MOSFET, 650 Vdss, 11 A continuous drain, 360 mOhm Rds(on) at 10V, 19.5 nC gate charge, TO-220-3 Full Pack through-hole package.","salesMarkdown":"## Obsolete — sourcing this STFU16N65M2 now STMicroelectronics lists the STFU16N65M2 as Obsolete. No LTB window remains, so every buy is a spot-market transaction. ## 650 V, 11 A — where this MOSFET fits ## Gate drive and switching — what the numbers mean Gate charge is 19.5 nC at 10 V, and input capacitance measures 718 pF at 100 V drain bias. These are low figures for a 650 V device of this current rating, which means the gate driver sees a light load — a standard 1 A gate-driver IC or even a discrete totem-pole pair can switch it cleanly. The 4 V maximum threshold at 250 µA means a 10 V gate drive is needed to achieve the rated Rds(on); at 5 V drive the on-resistance will be significantly higher, so check the transfer curve if the gate supply is lower than 10 V. Maximum power dissipation is 25 W at case temperature. The TO-220FP package has higher thermal resistance than a standard TO-220 because the plastic body isolates the tab — budget for a larger heatsink or forced airflow if the dissipation approaches the 25 W ceiling.","metaTitle":"STFU16N65M2 MDmesh M2 N-Channel MOSFET, 650V 11A TO-220FP","metaDescription":"STMicroelectronics STFU16N65M2 N-channel 650V 11A MOSFET in TO-220FP. 360mOhm Rds(on), 19.5nC gate charge.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M2","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STFU16","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"360mOhm @ 5.5A, 10V","Power Dissipation (Max)":"25W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"19.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"718 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.4300","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null},"ai":{"faq":[{"question":"What is the equivalent or replacement for STFU16N65M2?","answer":"ST has not published an official successor for the STFU16N65M2. For a pin-compatible replacement in the same MDmesh M2 family, look at the STF16N65M2 (standard TO-220, non-isolated tab) or the STP16N65M2 (TO-220, different package variant). Both share the same 650 V / 11 A / 360 mOhm die but differ in package and thermal performance. Verify the package and mounting requirements before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STFU16N65M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STFU16N65M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}