{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STFU13N65M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STFU13N65M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STFU13N65M2","factsUrl":"https://icboms.com/api/mcp/products/STFU13N65M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh M2 series, N-Channel MOSFET, 650 V Vdss, 10 A continuous drain, 430 mOhm Rds(on) at 5 A 10 V, 17 nC gate charge, TO-220-3 Full Pack through-hole package.","salesMarkdown":"## 650 V N-channel in a full-pack TO-220 The STFU13N65M2 is an N-channel 650 V 10 A MOSFET in the TO-220FP full-pack package. Maximum on-resistance is 430 mOhm at 5 A drain current with 10 V gate drive. That figure sets the conduction loss floor for a given RMS current in a flyback primary or PFC boost stage — at 2 A RMS the dissipation is under 2 W, leaving headroom inside the 25 W power dissipation limit at the case. Gate charge is 17 nC at 10 V. Input capacitance is 590 pF at 100 V drain bias.","metaTitle":"STFU13N65M2 MOSFET N-CH 650V 10A TO-220FP, MDmesh M2","metaDescription":"STMicroelectronics STFU13N65M2 N-channel 650V 10A MOSFET in TO-220FP full-pack. 430 mOhm Rds(on) at 5A, 17 nC gate charge.","metaKeywords":null},"attributes":{"series":"MDmesh™ M2","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M2","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STFU13","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"430mOhm @ 5A, 10V","Power Dissipation (Max)":"25W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"17 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"590 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"10A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.9300","priceTiers":[{"qty":1,"price":"$1.93000","currency":"USD"},{"qty":10,"price":"$1.60100","currency":"USD"},{"qty":100,"price":"$1.27410","currency":"USD"},{"qty":500,"price":"$1.07806","currency":"USD"},{"qty":1000,"price":"$0.91472","currency":"USD"},{"qty":2000,"price":"$0.86898","currency":"USD"},{"qty":5000,"price":"$0.83631","currency":"USD"},{"qty":10000,"price":"$0.80863","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/d968df473612f067063f0a1be1decc1f.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STFU13N65M2/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STFU13N65M2?","answer":"Maximum Rds(on) is 430 mOhm at 5 A drain current with 10 V gate drive. This is the conduction loss spec to use for thermal budgeting in a power stage."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STFU13N65M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STFU13N65M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}