{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STFILED524","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STFILED524","canonicalUrl":"https://icboms.com/stmicroelectronics/STFILED524","factsUrl":"https://icboms.com/api/mcp/products/STFILED524","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STFILED524 N-Channel MOSFET, 525 Vdss, 4 A continuous drain, 2.6 Ohm Rds(on) at 10 V, TO-262-3 Full Pack I²Pak, -55°C to 150°C junction temperature.","salesMarkdown":"The STMicroelectronics STFILED524 is an N-Channel power MOSFET built with standard metal-oxide semiconductor technology. The 525 V drain-source rating puts this MOSFET squarely into high-voltage offline applications — think flyback converters, PFC stages, or auxiliary supplies in industrial power systems. The 4 A continuous current at 25°C is the headline number, but real-world current depends on your switching frequency and heatsinking; the 20 W maximum power dissipation (Tc) is the hard ceiling. The 2.6 Ohm Rds(on) at 10 V gate drive is moderate — expect conduction losses around 2.6 W at 1 A, so plan for a heatsink or forced air if you run near the current limit. The through-hole I2PAKFP package is a field-service-friendly choice — no hot-air station needed, just a soldering iron and a screwdriver for the heatsink mount.","metaTitle":"STFILED524 N-Channel MOSFET, 525 V, 4 A, 2.6 Ohm Rds(on)","metaDescription":"STMicroelectronics STFILED524 N-Channel MOSFET, 525 Vdss, 4 A continuous drain, 2.6 Ohm Rds(on) at 10 V. TO-262-3 I2PAKFP package. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"-","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Full Pack, I²Pak","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STFILED524","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"2.6Ohm @ 2.2A, 10V","Power Dissipation (Max)":"20W (Tc)","Supplier Device Package":"I2PAKFP (TO-281)","Gate Charge (Qg) (Max) @ Vgs":"12 nC @ 10 V","Drain to Source Voltage (Vdss)":"525 V","Input Capacitance (Ciss) (Max) @ Vds":"340 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"4A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/18fa9d242fb91cd200e552ad3b7082f9.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STFILED524/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STFILED524?","answer":"The maximum on-resistance is 2.6 Ohm at a gate-source voltage of 10 V and a drain current of 2.2 A."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STFILED524","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STFILED524 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}