{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STFI4N62K3","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STFI4N62K3","canonicalUrl":"https://icboms.com/stmicroelectronics/STFI4N62K3","factsUrl":"https://icboms.com/api/mcp/products/STFI4N62K3","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH3™ N-Channel MOSFET, STFI4N62K3, 620 V Vdss, 3.8 A Id, 2 Ohm Rds(on) at 10 V, TO-262-3 Full Pack I²Pak, Through Hole, 25 W power dissipation, 150°C junction temperature.","salesMarkdown":"STMicroelectronics lists the STFI4N62K3 as Obsolete. For sustaining production or repair, the available channel is independent distribution — franchised or verified excess stock. ## Package and mounting — TO-262 full-pack I²Pak The STFI4N62K3 comes in a TO-262-3 Full Pack (I²Pak) through-hole package, with the supplier device package designated I2PAKFP (TO-281). The full-pack isolation means the metal tab is electrically isolated from the drain, which simplifies heatsinking without an insulating pad in many designs. The through-hole mount suits wave-solder assembly and manual rework.","metaTitle":"STFI4N62K3 N-Channel MOSFET, 620 V, 3.8 A, SuperMESH3","metaDescription":"STMicroelectronics STFI4N62K3 N-channel MOSFET, 620 V Vdss, 3.8 A Id, 2 Ohm Rds(on). Obsolete.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH3™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Full Pack, I²Pak","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STFI4N","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"2Ohm @ 1.9A, 10V","Power Dissipation (Max)":"25W (Tc)","Supplier Device Package":"I2PAKFP (TO-281)","Gate Charge (Qg) (Max) @ Vgs":"22 nC @ 10 V","Drain to Source Voltage (Vdss)":"620 V","Input Capacitance (Ciss) (Max) @ Vds":"550 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"3.8A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.2700","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/7fe033c157c2c9c974a82c59fbd0ef5e.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STFI4N62K3/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STFI4N62K3?","answer":"ST does not list a direct replacement part for the STFI4N62K3. For new designs, look at current-production 620 V SuperMESH3 N-channel MOSFETs from ST with similar Rds(on) and gate charge in a TO-220 or TO-247 package. Cross-reference by Vdss, Rds(on), and gate charge to find a suitable alternative."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STFI4N62K3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STFI4N62K3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T14:33:32.672Z","lastPublished":"2026-07-16T14:33:32.672Z","indexable":true}}