{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STFI34NM60N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STFI34NM60N","canonicalUrl":"https://icboms.com/stmicroelectronics/STFI34NM60N","factsUrl":"https://icboms.com/api/mcp/products/STFI34NM60N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II series, N-Channel MOSFET, 600 V Drain-to-Source Voltage, 105 mOhm Rds(on) @ 14.5 A, 10 V, 29 A Continuous Drain Current, Through Hole, TO-262-3 Full Pack I²Pak, I2PAKFP (TO-281).","salesMarkdown":"## 600 V, 105 mOhm, 29 A — the power MOSFET that defined a generation The STFI34NM60N: These ratings place it in the high-voltage switching class used in power supplies, lighting ballasts, and industrial converters where the through-hole I2PAKFP package (TO-281) provides a low-thermal-resistance path to a heatsink. The 600 V, 105 mOhm, 29 A ratings and the I2PAKFP footprint are the key parameters to match when selecting a substitute. ## Gate charge and input capacitance — switching loss drivers The STFI34NM60N specifies a maximum gate charge of 84 nC at 10 V and an input capacitance of 2722 pF at 100 V drain-source. These numbers drive the gate-drive power requirement and the switching transition times. A gate-drive source capable of sourcing and sinking 84 nC per cycle at the target frequency is needed; the 2722 pF Ciss also sets the Miller plateau duration. For a hard-switched converter at 100 kHz, the switching losses will be moderate — budget the gate-drive losses accordingly.","metaTitle":"STFI34NM60N N-Channel MOSFET, 600V, 105mOhm, 29A, MDmesh II","metaDescription":"STFI34NM60N N-channel MOSFET from STMicroelectronics MDmesh II series. 600V Vdss, 105mOhm Rds(on), 29A Id.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Full Pack, I²Pak","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STFI34N","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"105mOhm @ 14.5A, 10V","Power Dissipation (Max)":"40W (Tc)","Supplier Device Package":"I2PAKFP (TO-281)","Gate Charge (Qg) (Max) @ Vgs":"84 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"2722 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"29A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/d52fdf78ee9fa8465621d925f6f27b15.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STFI34NM60N/alternatives.json"},"ai":{"faq":[{"question":"What is a direct replacement for STFI34NM60N?","answer":"A replacement should match the 600 V Vdss, 105 mOhm Rds(on) max, 29 A Id rating, and the I2PAKFP (TO-281) through-hole package. A current-generation MDmesh MOSFET from ST with similar ratings is the starting point for qualification."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STFI34NM60N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STFI34NM60N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}