{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STFI31N65M5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STFI31N65M5","canonicalUrl":"https://icboms.com/stmicroelectronics/STFI31N65M5","factsUrl":"https://icboms.com/api/mcp/products/STFI31N65M5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ V N-Channel MOSFET, 650 V Vdss, 22 A Id (Tc), 148 mOhm Rds(on) @ 11 A, 10 V, 45 nC Qg, I2PAKFP (TO-262) through-hole package.","salesMarkdown":"## 650 V, 22 A, 148 mOhm — the MDmesh V power switch The STFI31N65M5: The 45 nC typical gate charge keeps switching losses manageable in hard-switched topologies. This through-hole device comes in the TO-262-3 Full Pack, I²Pak package. The 650 V Vdss gives headroom for 400 V DC-link rails in PFC stages, flyback converters, and resonant converters with up to 10% overshoot margin. The 148 mOhm Rds(on) at 10 V gate drive means conduction loss at 11 A is about 18 W — the 30 W package dissipation limit (Tc) leaves some margin but demands a good thermal path to the heatsink. The full-pack I2PAKFP isolates the drain tab electrically, so you can mount it directly to a grounded heatsink without a mica washer. Gate charge of 45 nC is moderate; a standard gate driver with 1 A to 2 A peak current will switch it in the tens of nanoseconds. Input capacitance of 1865 pF at 100 V is typical for this class and sets the drive impedance needed to avoid ringing.","metaTitle":"STFI31N65M5 N-Channel MOSFET, 650 V, 22 A, MDmesh V, I2PAKFP","metaDescription":"STFI31N65M5 N-Channel MOSFET from STMicroelectronics MDmesh V series. 650 V Vdss, 22 A Id, 148 mOhm Rds(on). Obsolete.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ V","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Full Pack, I²Pak","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STFI31N","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"148mOhm @ 11A, 10V","Power Dissipation (Max)":"30W (Tc)","Supplier Device Package":"I2PAKFP (TO-281)","Gate Charge (Qg) (Max) @ Vgs":"45 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1865 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"22A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.0100","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/03d1fe84b53fe70c20fca465a76454ad.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STFI31N65M5/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STFI31N65M5?","answer":"No official replacement is listed in the record. For new designs, consider current-generation MDmesh parts with similar 650 V and 22 A ratings from STMicroelectronics, but verify pinout and package compatibility as the I2PAKFP full-pack package may differ."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STFI31N65M5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STFI31N65M5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T14:37:18.394Z","lastPublished":"2026-07-16T14:37:18.394Z","indexable":true}}