{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STFI28N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STFI28N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STFI28N60M2","factsUrl":"https://icboms.com/api/mcp/products/STFI28N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STFI28N60M2, MDmesh™ II Plus series, N-Channel MOSFET, 600 V Vdss, 22 A Id, 150 mOhm Rds(on) at 11 A, 10 V, TO-262-3 Full Pack I²Pak through-hole, 30 W power dissipation, 150°C junction temperature.","salesMarkdown":"The STMicroelectronics STFI28N60M2 is a 600 V, 22 A N-channel power MOSFET from the MDmesh™ II Plus series, built with ST's proprietary strip-layout technology to reduce on-resistance and switching losses. It comes in a through-hole I2PAKFP (TO-262-3 Full Pack) package, rated for 150°C junction temperature and dissipating up to 30 W at the case. Typical applications include high-voltage switching converters, power factor correction stages, and lighting ballasts where the 600 V blocking voltage and 150 mOhm Rds(on) at 10 V gate drive provide a solid efficiency baseline. ## Key ratings — the numbers that decide the fit The 600 V drain-to-source voltage (Vdss) sets the off-state blocking capability; in a 400 V DC bus or PFC stage this leaves healthy derating margin. Gate charge of 36 nC at 10 V and input capacitance of 1440 pF at 100 V give a sense of the switching drive requirement — manageable for a standard gate driver IC.","metaTitle":"STFI28N60M2 N-Channel MOSFET, 600 V, 22 A, MDmesh II Plus","metaDescription":"STFI28N60M2 600 V N-channel MOSFET, 22 A, 150 mOhm Rds(on), MDmesh II Plus series. Check availability and RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II Plus","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Full Pack, I²Pak","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STFI28N","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"150mOhm @ 11A, 10V","Power Dissipation (Max)":"30W (Tc)","Supplier Device Package":"I2PAKFP (TO-281)","Gate Charge (Qg) (Max) @ Vgs":"36 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1440 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"22A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.1600","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/d5934b32d918b45d6a35b4934b80ff12.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the replacement for STFI28N60M2?","answer":"Any replacement must be validated against the original's 600 V, 22 A, 150 mOhm Rds(on), and I2PAKFP through-hole package."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STFI28N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STFI28N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}