{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STFI26NM60N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STFI26NM60N","canonicalUrl":"https://icboms.com/stmicroelectronics/STFI26NM60N","factsUrl":"https://icboms.com/api/mcp/products/STFI26NM60N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II N-Channel MOSFET, 600 V drain-source, 20 A continuous drain, 165 mOhm Rds(on) at 10 V, 60 nC gate charge, TO-262 full pack (I2PAKFP). Through-hole, ±25 V gate-source, 35 W dissipation.","salesMarkdown":"## 600 V N-channel MOSFET from the MDmesh™ II line The STFI26NM60N is a 600 V N-channel power MOSFET from ST's MDmesh™ II series, built for high-voltage switch-mode power supplies and offline converters. The gate charge of 60 nC at 10 V keeps switching losses manageable in hard-switched topologies. ## Package and mounting — through-hole I2PAKFP Housed in a TO-262 full-pack (I2PAKFP) through-hole package with the supplier device code I2PAKFP (TO-281). The full-pack construction means the back of the package is electrically isolated — no separate insulating pad needed against the heatsink, which simplifies assembly in grounded heatsink designs. Rated for a maximum power dissipation of 35 W at case temperature. ST lists this part as Obsolete.","metaTitle":"STFI26NM60N N-Channel MOSFET, 600V, 20A, 165mOhm, MDmesh II","metaDescription":"STFI26NM60N N-channel 600V 20A MOSFET, 165mOhm Rds(on) at 10V, 60nC gate charge. MDmesh II series. Request RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Full Pack, I²Pak","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STFI26N","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"165mOhm @ 10A, 10V","Power Dissipation (Max)":"35W (Tc)","Supplier Device Package":"I2PAKFP (TO-281)","Gate Charge (Qg) (Max) @ Vgs":"60 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1800 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"20A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STFI26NM60N/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STFI26NM60N?","answer":"The maximum on-resistance is 165 mOhm at a drain current of 10 A and a gate-source voltage of 10 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STFI26NM60N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STFI26NM60N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}