{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STFI15NM65N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STFI15NM65N","canonicalUrl":"https://icboms.com/stmicroelectronics/STFI15NM65N","factsUrl":"https://icboms.com/api/mcp/products/STFI15NM65N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II N-Channel MOSFET, STFI15NM65N, 650 V Vdss, 12 A Id, 380 mOhm Rds(on) at 10 V, I2PAKFP (TO-262) through-hole package, -55°C to 150°C junction temperature.","salesMarkdown":"## 650 V, 12 A N-channel MOSFET in I2PAKFP — what you need to know The STMicroelectronics STFI15NM65N is an N-channel power MOSFET built on the MDmesh™ II technology, a multi-drain mesh layout that reduces on-resistance while keeping the 650 V drain-source breakdown. The full-pack package isolates the back metal, so no insulating pad is needed between the tab and the heatsink — a time-saver on the assembly line, but the thermal path is through the plastic, so the 30 W ceiling is real and not conservative. The STFI15NM65N is listed as Obsolete. ST has moved on from this MDmesh II generation. For existing BOMs, source through surplus or last-time-buy channels. ## Gate charge and switching — the 33.3 nC number Gate charge is 33.3 nC at 10 V. Input capacitance is 983 pF at 50 V. The through-hole full-pack package isolates the tab electrically.","metaTitle":"STFI15NM65N N-Channel MOSFET, 650 V, 12 A, MDmesh II","metaDescription":"STMicroelectronics STFI15NM65N N-channel 650 V, 12 A MOSFET in I2PAKFP. MDmesh II technology, 380 mOhm Rds(on). Request quote.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Full Pack, I²Pak","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STFI15N","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"380mOhm @ 6A, 10V","Power Dissipation (Max)":"30W (Tc)","Supplier Device Package":"I2PAKFP (TO-281)","Gate Charge (Qg) (Max) @ Vgs":"33.3 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"983 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"12A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.5400","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/595655647ca103fcca4c9a19da870909.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is STFI15NM65N obsolete?","answer":"Yes, the STFI15NM65N is listed as Obsolete. ST has discontinued this MDmesh II generation part. For new designs, look at current MDmesh V or K5 series parts; for existing BOMs, source through surplus or last-time-buy channels."},{"question":"What is the Rds(on) of STFI15NM65N?","answer":"At lower gate voltages the on-resistance rises significantly — 10 V is the recommended drive level."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STFI15NM65N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STFI15NM65N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}