{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STFI13NK60Z","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STFI13NK60Z","canonicalUrl":"https://icboms.com/stmicroelectronics/STFI13NK60Z","factsUrl":"https://icboms.com/api/mcp/products/STFI13NK60Z","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH™ N-Channel MOSFET, 600V Vdss, 13A Id, 550mOhm Rds(on) @ 10V, 92nC Qg, TO-262-3 Full Pack (I²Pak), -55°C to 150°C.","salesMarkdown":"## 600 V, 13 A N-channel SuperMESH MOSFET — now obsolete The STFI13NK60Z: On-resistance is 550 mOhm maximum at 10 V gate drive with 4.5 A drain current; total gate charge is 92 nC at 10 V. The device is packaged in a through-hole TO-262-3 Full Pack (I²Pak) with an isolated tab. For sustainment of existing designs, this part must be sourced through the independent distribution channel — new-old-stock or surplus inventory. Any BOM line carrying this MPN should be reviewed for a form-fit-function replacement. ## Package and thermal: TO-262-3 Full Pack Maximum power dissipation is 35 W at case temperature, which sets the thermal design limit. The isolated tab simplifies assembly in systems where the heatsink is at chassis ground potential, but the package's higher thermal resistance compared to a standard TO-220 means the heatsink must be sized accordingly to keep junction temperature below 150°C at full load.","metaTitle":"STFI13NK60Z N-Channel MOSFET, 600V, 13A, SuperMESH","metaDescription":"STFI13NK60Z N-Channel 600V 13A MOSFET from STMicroelectronics SuperMESH series. Rds(on) 550mOhm, TO-262-3 Full Pack.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Full Pack, I²Pak","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 100µA","Base Product Number":"STFI13N","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"550mOhm @ 4.5A, 10V","Power Dissipation (Max)":"35W (Tc)","Supplier Device Package":"I2PAKFP (TO-281)","Gate Charge (Qg) (Max) @ Vgs":"92 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"2030 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"13A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.9700","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/f04d3cade7389c1b514a95e929ee5b99.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of STFI13NK60Z?","answer":"Maximum on-resistance is 550 mOhm at 10 V gate drive with 4.5 A drain current."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STFI13NK60Z","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STFI13NK60Z when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}