{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STFI13N95K3","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STFI13N95K3","canonicalUrl":"https://icboms.com/stmicroelectronics/STFI13N95K3","factsUrl":"https://icboms.com/api/mcp/products/STFI13N95K3","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH3™ N-Channel MOSFET, STFI13N95K3, 950V Vdss, 10A Id, 850mOhm Rds(on) @ 5A 10V, 51nC Qg, TO-262-3 Full Pack I2PAK, -55°C to 150°C, Tube.","salesMarkdown":"## 950 V N-channel MOSFET — SuperMESH3™ generation The STMicroelectronics STFI13N95K3 is a 950 V, 10 A N-channel power MOSFET built on the SuperMESH3™ technology platform. It targets high-voltage switched-mode power supplies, PFC stages, and offline converters where a through-hole, isolated full-pack package simplifies assembly. ## Full-pack I2PAK — no insulating hardware needed The TO-262-3 Full Pack (I2PAKFP, TO-281) isolates the back of the package electrically, so no mica washer or insulating pad is required between the device and the heatsink. This cuts assembly time and parts count in a production BOM. The through-hole mounting suits point-to-point wiring and prototyping, though the tab's thermal path runs through the resin — expect higher junction-to-case thermal resistance than a standard TO-220. ## Obsolete — sourcing through surplus distribution No direct-replacement order code appears in the lifecycle record. For a BOM line already qualified to this footprint and voltage class, the available stock sits in independent distribution and surplus channels. The STP13N95K3 shares the same base product number and die but comes in a different package (TO-220); verify pinout and thermal compatibility before substituting. Any new design should select an active 950 V MOSFET with a comparable gate charge and on-resistance profile. ## Gate charge and capacitance — switching-loss budget These numbers set the drive requirement and switching loss estimate for a hard-switched converter. The 10 V drive voltage for rated Rds(on) means a standard 12 V gate-drive rail is sufficient; a logic-level 5 V drive will not achieve the specified on-resistance. ## Temperature range — military-grade junction Power dissipation is rated at 40 W at case temperature. The full-pack package limits heat extraction compared to a metal-tab variant, so the thermal design should budget for the higher junction-to-case gradient.","metaTitle":"STFI13N95K3 N-Channel MOSFET, 950V 10A SuperMESH3, Obsolete","metaDescription":"STFI13N95K3 N-channel 950V 10A MOSFET from STMicroelectronics SuperMESH3 series. 850mOhm Rds(on), -55 to 150°C.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH3™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Full Pack, I²Pak","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 100µA","Base Product Number":"STFI13N","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"850mOhm @ 5A, 10V","Power Dissipation (Max)":"40W (Tc)","Supplier Device Package":"I2PAKFP (TO-281)","Gate Charge (Qg) (Max) @ Vgs":"51 nC @ 10 V","Drain to Source Voltage (Vdss)":"950 V","Input Capacitance (Ciss) (Max) @ Vds":"1620 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"10A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.7000","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/16fd324900468c2131774c36ae0d1d76.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the direct replacement for STFI13N95K3?","answer":"The STP13N95K3 shares the same base product number and die but uses a TO-220 package instead of the full-pack I2PAK. Verify mechanical and thermal compatibility before substituting. For new designs, select an active 950 V N-channel MOSFET with similar gate charge and Rds(on)."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STFI13N95K3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STFI13N95K3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}