{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STFI12N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STFI12N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STFI12N60M2","factsUrl":"https://icboms.com/api/mcp/products/STFI12N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ M2 series, STFI12N60M2, N-Channel MOSFET, 600 V Vdss, 9 A Id, 450 mOhm Rds(on) at 10 V, 16 nC Qg, TO-262-3 Full Pack I2PAK, -55°C to 150°C.","salesMarkdown":"## What the 600 V / 9 A rating buys you in a switching supply Rds(on) is specified at 450 mOhm maximum with 4.5 A drain current and 10 V gate drive, which translates to roughly 2 W conduction loss at full rated current — manageable with the 25 W power dissipation limit and the full-pack's direct-to-heatsink mounting. ST has marked the STFI12N60M2 as Obsolete, which means the manufacturer no longer produces this exact order code. The through-hole I2PAK package makes the part easier to authenticate visually than a surface-mount device: the laser etch on the package body should match ST's marking format for the MDmesh M2 series, and the date code should be consistent with the manufacturer's production timeline. Any lot with a date code after the EOL notice window or with inconsistent marking font should raise a flag. ## Gate charge and input capacitance — sizing the driver A driver capable of sourcing and sinking at least 1 A peak will switch this FET in the 50-100 ns range, which is typical for a 100-200 kHz switching converter.","metaTitle":"STMicroelectronics STFI12N60M2 N-Channel MOSFET, 600V, 9A","metaDescription":"STFI12N60M2 N-channel 600V 9A MOSFET in TO-262 full pack. MDmesh M2 series, 450mOhm Rds(on), 16nC gate charge. Request quote.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M2","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Full Pack, I²Pak","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STFI12N","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"450mOhm @ 4.5A, 10V","Power Dissipation (Max)":"25W (Tc)","Supplier Device Package":"I2PAKFP (TO-281)","Gate Charge (Qg) (Max) @ Vgs":"16 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"538 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"9A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.6200","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/67cb381bbd470bb8e22a3bc32f5239ec.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STFI12N60M2/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STFI12N60M2?","answer":"The maximum on-resistance is 450 mOhm at a drain current of 4.5 A and a gate-source voltage of 10 V. This is the figure to use for worst-case conduction loss calculations in a switching converter."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STFI12N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STFI12N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T14:33:36.979Z","lastPublished":"2026-07-16T14:33:36.979Z","indexable":true}}