{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STFI11NM65N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STFI11NM65N","canonicalUrl":"https://icboms.com/stmicroelectronics/STFI11NM65N","factsUrl":"https://icboms.com/api/mcp/products/STFI11NM65N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II, STFI11NM65N, N-Channel MOSFET, 650V Vdss, 11A Id, 455mOhm Rds(on) @ 10V, TO-262-3 Full Pack (I2PAKFP), Through Hole, 25W Tc power dissipation.","salesMarkdown":"The 650 V Vdss rating places this part in the high-voltage sweet spot for single-switch flyback converters, PFC stages, and auxiliary power supplies in industrial and telecom equipment. The 25 W power dissipation ceiling (Tc) means the junction-to-case thermal path is the limiting factor; the Full Pack package's isolated tab helps with heatsinking but adds thermal resistance compared to a standard TO-220. Input capacitance of 800 pF at 50 V is moderate, so the gate drive does not need a high-current buffer for moderate switching frequencies.","metaTitle":"STFI11NM65N MDmesh II N-Ch MOSFET, 650V, 11A, TO-262","metaDescription":"STFI11NM65N N-channel 650V 11A MOSFET, 455mOhm Rds(on), TO-262 Full Pack. Specifications and replacement info.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Full Pack, I²Pak","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STFI11N","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"455mOhm @ 5.5A, 10V","Power Dissipation (Max)":"25W (Tc)","Supplier Device Package":"I2PAKFP (TO-281)","Gate Charge (Qg) (Max) @ Vgs":"29 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"800 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/b6ec1e5f988635a2635f6bcbbe8bf2ed.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STFI11NM65N/alternatives.json"},"ai":{"faq":[{"question":"What is a suitable replacement for STFI11NM65N?","answer":"For a new design, look at current-generation 650 V N-channel MOSFETs in a through-hole Full Pack or isolated TO-220 package from ST's MDmesh series or from competitors. For a BOM fill, the closest pin-compatible alternative will share the TO-262 Full Pack (I2PAKFP) footprint and similar gate-drive voltage; parametric matching should target 650 V Vdss, 11 A Id, and 455 mΩ Rds(on) as a baseline."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STFI11NM65N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STFI11NM65N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}