{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STFI10N65K3","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STFI10N65K3","canonicalUrl":"https://icboms.com/stmicroelectronics/STFI10N65K3","factsUrl":"https://icboms.com/api/mcp/products/STFI10N65K3","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH3™ series, N-Channel MOSFET, Through Hole, TO-262-3 Full Pack, I²Pak, 650 V drain-source, 10 A continuous drain at 25°C, 1 Ohm Rds(on) at 10 V, ±30 Vgs max, 42 nC gate charge.","salesMarkdown":"## 650 V N-channel MOSFET for offline power conversion The STMicroelectronics STFI10N65K3 is a 650 V N-channel power MOSFET from the SuperMESH3™ series, built with a metal-oxide semiconductor structure. The 42 nC typical gate charge keeps switching losses manageable in hard-switched topologies like flyback and PFC stages. ## Obsolete — plan for a replacement For new designs or production fills, buyers should evaluate pin-compatible alternatives within the SuperMESH3 family or other 650 V N-channel MOSFETs in the I2PAKFP footprint. The 650 V drain-source voltage rating provides adequate margin for universal-input offline converters (up to 400 V DC bus) and allows derating for transient spikes common in flyback and LLC topologies. The 1 Ohm Rds(on) at 10 V gate drive sets conduction losses at roughly 10 W at 3.6 A, so a heatsink is mandatory. The 42 nC gate charge is moderate for a 650 V device, meaning the gate driver sees a reasonable switching loss at frequencies up to 100 kHz.","metaTitle":"STFI10N65K3 N-Channel MOSFET, 650 V, 10 A, SuperMESH3","metaDescription":"STMicroelectronics STFI10N65K3 N-channel MOSFET, 650 Vdss, 10 A continuous drain, 1 Ohm Rds(on) at 10 V.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH3™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Full Pack, I²Pak","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 100µA","Base Product Number":"STFI10N","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"1Ohm @ 3.6A, 10V","Power Dissipation (Max)":"35W (Tc)","Supplier Device Package":"I2PAKFP (TO-281)","Gate Charge (Qg) (Max) @ Vgs":"42 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1180 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"10A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.8600","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/23d9ed1138f57cf4d578ca5d10b801f9.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the replacement for STFI10N65K3?","answer":"Buyers should look for a pin-compatible 650 V N-channel MOSFET in the I2PAKFP (TO-262 Full Pack) package from ST's SuperMESH3 family or other vendors. The key parameters to match are the 650 V Vdss, 10 A Id, and 1 Ohm Rds(on) at 10 V gate drive."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STFI10N65K3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STFI10N65K3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}