{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STFI10N62K3","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STFI10N62K3","canonicalUrl":"https://icboms.com/stmicroelectronics/STFI10N62K3","factsUrl":"https://icboms.com/api/mcp/products/STFI10N62K3","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH3™ N-Channel MOSFET, STFI10N62K3, 620 Vdss, 8.4 A continuous drain, 750 mOhm Rds(on) at 10 V, TO-262-3 Full Pack (I2PAKFP) through-hole, -55°C to 150°C junction.","salesMarkdown":"## 620 V N-channel in a through-hole full-pack package Maximum on-resistance is 750 mOhm at Vgs = 10 V and Id = 4 A, with a gate charge of 42 nC at 10 V — the gate drive requirement is modest, but the Rds(on) is on the higher side for a 620 V class, so conduction losses need to be checked against the thermal budget. No official successor or replacement part number is listed by the manufacturer. ## Thermal and switching profile Input capacitance (Ciss) is 1250 pF at Vds = 50 V, and the maximum gate threshold voltage is 4.5 V at 100 µA drain current.","metaTitle":"STFI10N62K3 N-Channel MOSFET, 620 V, 8.4 A, SuperMESH3","metaDescription":"STFI10N62K3 N-Channel MOSFET from STMicroelectronics SuperMESH3 series, 620 Vdss, 8.4 A, 750 mOhm Rds(on).","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH3™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Full Pack, I2PAK","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 100µA","Base Product Number":"STFI10N","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"750mOhm @ 4A, 10V","Power Dissipation (Max)":"30W (Tc)","Supplier Device Package":"TO-281 (I2PAKFP)","Gate Charge (Qg) (Max) @ Vgs":"42 nC @ 10 V","Drain to Source Voltage (Vdss)":"620 V","Input Capacitance (Ciss) (Max) @ Vds":"1250 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"8.4A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.1800","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/fd568848b5fba46640ba38ecbc7af180.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STFI10N62K3/alternatives.json"},"ai":{"faq":[{"question":"Where can I buy STFI10N62K3?","answer":"The STFI10N62K3 is obsolete and no longer in production."},{"question":"Is STFI10N62K3 obsolete?","answer":"Yes, STMicroelectronics lists the STFI10N62K3 as obsolete. No official successor or replacement has been announced."},{"question":"What is the replacement for STFI10N62K3?","answer":"STMicroelectronics has not published a direct replacement for the STFI10N62K3. For a BOM fix, source the original part through independent channels; for a new design, evaluate a current-production 620 V N-channel MOSFET in a through-hole full-pack package with similar Rds(on) and gate charge."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STFI10N62K3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STFI10N62K3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T15:51:32.806Z","lastPublished":"2026-07-16T15:51:32.806Z","indexable":true}}